Bi2S3/石墨烯复合纳米材料的可控生长及其光电子器件研究

As an important semiconductor with non-toxic and excellent performance, Bi2S3 material has extensive applications in the optoelectronic device. However, it is difficult to achieve the Bi2S3 nanostructure layers with good uniformity and repeatability in the fabrication of device, especially for the patterning. Moreover, for the different substrate the technique is also different. Thus, the traditional techniques have the drawbacks of long cycle and high cost. In the item, we synthesize the novel Bi2S3/graphene hybrid nanomaterials by a simple seed-assistant hydrothermal approach, which is to grow the Bi2S3 nanomaterials with various size and morphology as well as patterning on graphene layers. Depending on the facile transfer of graphene, the Bi2S3/graphene hybrid nanomaterials can be transferred onto arbitrary substrates, which solve the application limitations of the Bi2S3 nanomaterials in optoelectronic device. The optoelectronic properties of Bi2S3/graphene hybrid nanomaterials and the unique interface properties between Bi2S3 nanomaterials and graphene layers are investigated deeply. Furthermore, the novel optoelectronic devices based on the Bi2S3/graphene hybrid nanomaterials are also fabricated，and the methods to improve the device performance are studied. This item is important for promoting the development of Bi2S3 nanomaterials and its extensive applications in diverse optoelectronic devices.

Bi2S3是一种无毒环保、性能优良的半导体材料，在光电子器件领域具有广泛的应用前景。然而，目前在器件制作中很难在衬底上实现具有良好均匀性、重复性以及图形化分布的Bi2S3纳米材料层，并且衬底材料不同工艺也会不同。因此，目前的器件工艺存在研制周期长和成本高的问题。本项目拟采用籽晶技术与水热相结合的方法可控生长新颖的Bi2S3/石墨烯复合纳米材料，即在石墨烯上生长不同尺寸、形貌的Bi2S3纳米材料并实现其图形化分布，利用石墨烯良好的可转移性和目标衬底普适性来解决Bi2S3纳米材料在光电子器件领域中难以推广使用的局限性。深入研究Bi2S3/石墨烯复合纳米材料的光电特性以及Bi2S3纳米材料与石墨烯界面处的独特性质，设计并制作基于Bi2S3/石墨烯复合纳米材料的新型光电子器件，寻求提高器件性能的方法与途径。本项目对于推动Bi2S3纳米材料的发展及其在各种光电子器件中的广泛应用具有重要意义。

二维过渡金属硫族化合物由于其新奇的电学和光学性能，在纳电子器件领域及新型光电器件领域具有重要的应用前景，吸引了诸多研究者的关注。本项目制备了高质量的二维过渡金属硫族化合物，如MoS2、MoTe2、WTe2等。通过AFM，SEM，光致荧光，旋光测量及各向异性拉曼等手段研究了其物理特性，并基于这些二维材料制备了新型二维材料石墨烯基的光电器件。