基于局域导电通道的阻变存储器电热耦合模型研究

As semiconductor process technology enters sub-20nm nodes, the mainstream of the traditional non-volatile memory technology, Flash memory, which is based on the floating-gate structure, has encountered its technical bottleneck. Resistive random access memory (RRAM) attracts great attention of the academic and industrial fields because of its excellent characteristics. The mechanism analysis, performance improvement and model building are hot issues in the RRAM device field at the present stage. Among them, the improvement of the device model has a very positive effect on the more in-depth analysis of the working mechanism and a better guide to the preparation of the device. Existing models have neglected some important facts, such as the influence of electro-thermal effect on the carriers transport and the electrode materials. This project will take the binary transition metal oxide RRAM as the research object based on the local conducting filaments mechanism. Based on the temperature and electric stress experiments, the physical mechanisms of the devices will be analyzed deeply, and the carriers transport process in the formed conductive filaments under the electro-thermal effect will be expounded. Then, the parameters of the devices can be extracted, and the electro-thermal model can be propose. The model will achieve the simulation of the device conversion process, provide the details of the parameter distributions, and be used to research the key factors affecting the conversion of the device. The project and its corresponding research achievements will play an important role in providing the experimental and theoretical references for device mechanism analysis and performance improvement.

半导体工艺技术节点进入20nm，基于浮栅结构的Flash存储器面临严重的技术瓶颈。阻变存储器以其卓越的特性受到学术和工业领域的高度重视。其机理剖析、性能提升以及模型建立都是现阶段RRAM器件领域研究的热点课题。其中，建立完善的器件模型对更深入地分析工作机理以及更好地指导器件制备具有非常积极的作用。现有的RRAM器件模型忽略电热效应对局域导电通道载流子输运、电极材料等的影响。为此，本项目以基于局域导电通道的二元过渡金属氧化物RRAM为研究对象，在温度和电应力实验的基础上，对器件物理机制进行深入剖析，阐明器件在电热耦合效应下导电通道中载流子的输运过程，准确提取电热效应下器件的内部参数关系，建立器件电热耦合模型，实现对器件转换过程的模拟仿真，得到电阻转换过程中器件内部各参数的分布细节，并利用模型研究影响器件转换的关键因素。本项目的实施与研究成果可为进一步器件机制分析和性能改善提供实验和理论参考。

半导体工艺技术节点进入20nm，基于浮栅结构的Flash存储器面临严重的技术瓶颈。阻变存储器以其卓越的特性受到学术和工业领域的高度重视。其机理剖析、性能提升以及模型建立都是现阶段RRAM器件领域研究的热点课题。其中，建立完善的器件模型对更深入地分析工作机理以及更好地指导器件制备具有非常积极的作用。现有的RRAM器件模型忽略电热效应对局域导电通道载流子输运、电极材料等的影响。.本项目通过流片实验、测试表征及理论分析研究了基于局域导电通道的多种介质材料不同器件的电阻转变特性和导电机制。在此基础上，通过温度和电应力实验，对器件物理机制进行深入剖析，阐明器件在电热耦合效应下导电通道中载流子的输运过程，提取参数，建立器件电热耦合模型。利用该模型实现对器件转换过程的模拟仿真，得到电阻转换过程中器件内部氧空位浓度、温度、电势、电场、复合率和产生率等参数的分布细节，并利用模型研究温度、导电细丝尺寸、电极热导率和电导率对器件转换的影响。另外，建立基于氧空位局域导电通道的RRAM器件阻变层晶体结构模型，通过第一性原理探索掺杂对器件的影响，为后续工作奠定了良好的基础。.本项目的实施与研究成果可为进一步器件机制分析和性能改善提供实验和理论参考。