蓝紫光响应增强的大动态范围硅光电倍增器的研究

In order to mitigate the contradiction between the PDE and the dynamic range,a new structure of SiPM with bulk integrated quenching resistors was first demonstrated at Novel Device Labortary(NDL),Beijing Normal University. This structure removes the strip resistor and interconnecting lines, the geometric fill factor become larger.The PDE can be increased while the APD cell density remains large, and both high photon detection effciency and large dynamic range can be obtained at the same time,the dynamic range of the SiPM is 10000/mm2.But the using of our SiPM acting as radiation detector is restricted by the low PDE at blue-light radiation(380-420nm).A high dynamic range silicon photomultipliers with enhanced blue-light sensitivityis studied in this project. A structure of SiPM with shallow junction is to be studied in this project. The PDE at blue light radiation(380-420nm)will be increased,in order to our SiPM can be used broadly.

本实验室(北京师范大学核科学与技术学院新器件实验室)研制的硅光电倍增器（SiPM）利用Si衬底材料本身的体电阻作为雪崩光电二极管（APD）的雪崩淬灭电阻，使每个APD单元的面积相应减小，提高了光敏有效面积与探测器总面积之比（填充因子），缓解了该类器件的探测效率和动态范围不能兼得的矛盾，研制出动态范围10000/平方毫米的SiPM器件。但研制成功的SiPM器件在蓝紫光区（波长380-420nm）较低的探测效率限制了我们研制的探测器在辐射探测方面的应用。本申请是在本实验室体电阻淬灭SiPM的研究基础之上提出蓝紫光响应增强的大动态范围SiPM的研制计划，通过浅结和减反射膜的设计和具体实施，提高研制SiPM探测器在蓝紫光区（波长380-420nm）的探测效率，使之具有更广泛的应用前景。

本实验室(北京师范大学核科学与技术学院新器件实验室)研制的硅光电倍增器（SiPM）利用Si衬底材料本身的体电阻作为雪崩光电二极管（APD）的雪崩淬灭电阻，使每个APD单元的面积相应减小，提高了光敏有效面积与探测器总面积之比（填充因子），缓解了该类器件的探测效率和动态范围不能兼得的矛盾，研制出动态范围10000/平方毫米的SiPM器件。但研制成功的SiPM器件在蓝紫光区（波长380-420nm）较低的探测效率（小于5%）限制了我们研制的探测器在辐射探测方面的应用。通过该项目的实施，设计了P+-P-N的器件结构，并通过离子注入来实现，通过模拟确定了衬底电阻率，并最终形成与CMOS工艺相兼容的平面探测器工艺流程。我们研制的SiPM探测器，在波长420nm处，达到峰值探测效率35%，在380nm处的探测效率达到25%，完全实现了蓝紫光响应增强的SiPM，并开发出面向辐射探测与核医学应用的SiPM产品。