有机-无机杂化光刻胶在极紫外光照下的光化学行为及极紫外光刻性能研究

A series of organic-inorganic hybrid photoresists will be designed and synthesized with different kinds of nano-metal oxides used as inorganic cores. Through system optimization design and experimental screening, a series of organic-inorganic hybrid photoresists will be optimized. The physico-chemical properties of these organic-inorganic hybrid photoresists, especially their thermal properties, particle size distribution and basic spectroscopic properties, will be investigated systematically. The relationship of the properties and the photoresist structurewill be studied. The photochemical behaviors and photochemical reaction mechanisms of the different series of hybrid photoresists under extreme ultraviolet radiation will be systematically studied, thorough the systematical analysis of outgassing and photochemical reaction products. Larger solubility difference of photoresist species in exposure and non-exposure areas (depending on the positive or negative photoresists) will be selected. The photolithographic properties of the series of photoresists will be characterized and the photoresist formulations with higher sensitivity, higher resolution and lower line edge roughness will be selected. Based on systematically analyzing the photochemical behavior and photolithographic properties of the organic-inorganic hybrid photoresists under extreme ultraviolet irradiation, our goal is to obtain organic-inorganic hybrid photoresist with the solution in the level of 10 nm (or even lower).

设计合成系列有机-无机杂化光刻胶，采用不同的纳米金属氧化物作为无机核，通过系统优化设计与实验筛选，得到优选的系列有机-无机杂化光刻胶。系统研究这些有机-无机杂化光刻胶的物理化学性质，尤其是对光刻具有较大影响的热学性质、颗粒度及颗粒度分布、基础光谱学性质等进行研究，对其与有机-无机杂化光刻胶结构的关系进行研究。系统研究这些光刻胶的光照产气性能和光化学反应产物，给出不同系列杂化光刻胶在极紫外光照下的光化学行为和光化学反应机理，得到光照前后曝光区和非曝光区在显影液中（根据正胶或负胶采用不同的显影液）具有较大溶解度差异的光刻胶品种。对系列光刻胶的光刻性能进行表征，得到具有较高灵敏度、较高分辨率和较低线边粗糙度的光刻胶配方。在系统分析极紫外光照下有机-无机杂化光刻胶的光化学行为和光刻性能的基础上，最终目标是得到10nm级别（甚至更低）的有机-无机杂化光刻胶配方和材料。

设计合成了系列有机-无机杂化光刻胶，通过系统优化设计与实验筛选，得到优选的系列有机-无机杂化光刻胶。系统研究了这些有机-无机杂化光刻胶的物理化学性质，尤其是对光刻具有较大影响的热学性质、颗粒度及颗粒度分布、基础光谱学性质等进行研究。系统研究了这些光刻胶的光照产气性能和光化学反应产物，给出不同系列杂化光刻胶在极紫外光照下的光化学行为和光化学反应机理，得到光照前后曝光区和非曝光区在显影液中具有较大溶解度差异的光刻胶品种。对系列光刻胶的光刻性能通过极紫外光刻和电子束光刻进行表征，得到了具有较高灵敏度、较高分辨率和较低线边粗糙度的光刻胶配方。在系统分析极紫外光照下有机-无机杂化光刻胶的光化学行为和光刻性能的基础上，得到了分辨率在20nm，部分光刻图案达到10nm+级别极紫外光刻胶配方材料。