基于介质腔硅通孔的硅基可配置微波集成滤波器研究

The project will research the key underlying scientific issues of microwave three-dimensional integrated circuits (3D ICs), including the dielectric-cavity through-silicon via (DC-TSV) array and the configurable microwave filters based on the DC-TSV. In order to reduce the abundant parasitic capacitance of TSVs and eddy-current loss of the semiconductor silicon substrate in microwave 3D ICs, the structure of DC-TSV array are proposed, including GSG-mode and differential TSV array. Effects of different material and structure of dielectric cavity on the electromagnetic properties and cross talk of TSVs are studied. The parasitic parameters and equvalent electrical model of DC-TSV array are proposed based on physical and material parameters. The configurable microwave filter of substrate-integrated-waveguide (SIW) based on DC-TSV array are researched further. Effects of various TSV structures and dielectric cavity on the performance of SIW based on the DC-TSV are studied. The structure, material, and physical parameters of SIW are designed and optimized according to the electromagnetic properties, including resonant frequency, band width, quality factor, and high frequency loss et al. The structure and phyical parameters of the microstrip feeds are also researched. The project will provide necessary theoretical and technical foundation for the development and application of configurable microwave filters and microwave 3D ICs based on TSV technology in the future.

本项目研究高速三维集成电路中介质腔硅通孔阵列结构，并进一步研究基于介质腔硅通孔技术的硅基可配置微波滤波器及其制作方法等关键科学问题。针对硅通孔的寄生电容与高频条件下半导体硅衬底的显著涡流损耗，提出介质腔TSV阵列结构，包括GSG模式及差分阵列结构。研究不同绝缘介质腔材料与结构对硅通孔阵列高频电磁特性及耦合噪声的影响；基于硅通孔材料与结构参数，提取高频介质腔硅通孔阵列的寄生参数并建立其等效电路模型。进一步研究基于介质腔硅通孔的硅基可配置微波滤波器基片集成波导及制作方法。研究不同结构硅通孔及介质腔对基片集成波导谐振频率、带宽、品质因数及损耗等高频电磁特性的影响，优化其结构、材料和尺寸；研究基片集成波导-微带转换器，优化其结构与设计参数，为基于硅通孔的硅基可配置微波滤波器以及高速三维集成电路的发展与应用提供必要的理论和技术基础。

本项目提出了高速三维集成电路中介质腔硅通孔阵列结构，并进一步提出了基于介质腔硅通孔技术的硅基可配置微波滤波器及其制作方法等关键科学技术。针对硅通孔的寄生电容与高频条件下半导体硅衬底的显著涡流损耗，提出了介质腔TSV阵列结构。研究了不同绝缘介质腔材料与结构对硅通孔阵列高频电磁特性及耦合噪声的影响；基于硅通孔材料与结构参数，提取高频介质腔硅通孔阵列的寄生参数并建立其等效电路模型。进一步提出了基于介质（BCB、玻璃等）腔硅通孔阵列结构的硅基双层堆叠式微波带通滤波器及制作方法。从归一化切比雪夫低通原型开始设计中心频率为160 GHz，相对带宽为12.5%的微波带通滤波器，提出了微波带通滤波器的等效电路，优化其结构与设计参数；提出了介质腔硅通孔阵列结构的硅基双层堆叠式微波带通滤波器的制作方法，为基于硅通孔的硅基可配置微波滤波器以及高速三维集成电路的发展与应用提供必要的理论和技术基础。