超导基底上超薄Bi（110）薄膜的生长与电子结构研究

The applicant focuses on utilizing angle-resolved photoemission spectroscopy to characterize the electronic properties of novel materials such as topological insulators and graphene, including electron-phonon interactions, spin-orbit interactions and consequences of broken symmetry environments. There are 27 publications until now, three of which are published as the first author, and one of them is being cited more than 100 times..Topological insulators (TIs) have been one of the hottest and most fascinating fields of current condensed matter physics and materials physics, due to their succinct theories, many novel physical phenomena, and a set of possible applications. The edge states of TIs are protected from back-scattering by time-reversal symmetry, which may lead to the development of error-tolerant quantum computing as well as spintronics. In this sense, 2D TIs can be a better candidate than 3D TIs in transport applications, since the electrons can only move along two directions at the edges of 2D TIs and thus completely be protected from backscattering, whereas the scattering phase space is strongly reduced (not in an absolute sense) for surface states of 3D TIs. Among them, ultrathin bismuth films are promising candidate 2D TI. In this project, BP-structured Bi(110) thin film is proposed to be grown on the superconductor substrate by Molecular Beam Epitaxial, then in situ Scanning Tunneling Microscope and Synchrotron Radiation Angle-Resolved Photoemission Spectroscopy will be used to study electronic structure and 1D edge states. The performance of this project will play an important role in both fundamental studies of spin transport and related applications, and promote the realization of device applications.

申请人在新奇材料的角分辨光电子能谱研究方面有丰富的经验，迄今发表SCI论文27篇，其中第一作者文章3篇，单篇最高引用超过100次。.拓扑绝缘体的边缘态受时间反演对称性保护，其载流子的自旋与动量相互锁定，在边缘可实现无背散射的传导，从而在自容错的拓扑量子计算、自旋电子器件等方面存在巨大的应用前景。二维拓扑绝缘体边缘上的电子只有两个移动方向，就此而言更具研究价值。超薄铋膜是为数不多的大能隙二维拓扑绝缘体的候选材料之一。本申请项目将基于北京同步辐射装置开展研究，拟采用分子束外延法在超导基底上制备高质量的超薄黑磷结构Bi（110）薄膜，以原位的扫描隧道显微镜和同步辐射角分辨光电子能谱实验方法来研究薄膜的电子结构和边缘态。本项目的开展有望对二维拓扑绝缘体的量子输运研究和器件应用产生重要的促进作用，为在未来信息器件方面的应用提供前沿研究基础。

拓扑绝缘体的边缘态受时间反演对称性保护，其载流子的自旋与动量相互锁定，在边缘可实现无背散射的传导，从而在自容错的拓扑量子计算、自旋电子器件等方面存在巨大的应用前景。二维拓扑绝缘体边缘上的电子只有两个移动方向，就此而言更具研究价值。超薄铋膜是为数不多的大能隙二维拓扑绝缘体的候选材料之一。本项目采用分子束外延法在超导基底上制备高质量的超薄Bi(111)、Bi(110)、Sn以及Sn1-xPbxTe薄膜，以原位的扫描隧道显微镜和同步辐射角分辨光电子能谱实验方法来研究薄膜的电子结构和边缘态，取得了一系列预期研究成果。本项目的开展有助于对二维拓扑绝缘体的量子输运研究和器件应用产生重要的促进作用，为在未来信息器件方面的应用提供前沿研究基础。