微弧氧化中空化剥离机制及其硅表面平坦化设计

Aiming at the problem of abrasion and non-contact chemical polishing in the contact surface planarization of silicon surface, it is easy to introduce the processing problem of elemental pollution. according to the principle of low-resistance diversion and the small-curvature convergence principle of electric field intensity, this application is going to in the electrochemical system of silicon single crystal use the mechanism of aggregation of field strength and the low resistance shunt mechanism of microporous silicon oxide film obtained by electrochemical conversion of anodic surface , The oxygen plasma environment of the enhanced and cavitation jet effect induced by nano-beam discharge on the surface of silicon anode was constructed by adjusting the peak and duration of the inter-electrode current. The properties of the membrane, Current peak and duration, the flow field characteristics of the electrolyte, the geometric deformation of the electric field feedback and the anode surface cavitation jet and the corresponding crystal integrity of the correlation law; reveal the electrochemical system of plasma oxidation and cavitation jet induced and corresponding The physical and chemical mechanism of space-time characteristics and the physical properties of jet products are summarized. The boundary conditions of nanometer scale cavitation jet and product stripping are summarized. The system parameters such as physical structure, inter-electrode electric field and flow field distribution are established. Sawing nano - scale flattening to an infinite number of mathematical physics models.

针对硅表面接触式平坦化处理存在的磨料致损和非接触式化学抛光技术易引入元素污染等加工难题，依据电子通量的低阻值分流定律和电场强度的小曲率汇聚原理，本项申请拟在硅单晶为阳极的电化学体系中，利用加工面残留的小曲率峰高对场强的汇聚机理，和阳极表面电化学转化所得微孔型氧化硅薄膜的低阻值分流机制，通过调控极间电流峰值和时续状态，构建出可于硅阳极表面经纳米微束放电诱发氧化增强和空化射流效应的氧等离子体环境；研究转化膜微观结构、极间电流波形、电解液流场特性、峰高剥离速率对阳极表面空化射流及相应晶体完整度的相关性规律；揭示微弧氧化中等离子体氧化增强与空化射流诱发及相应时空特性的物理化学机理及射流产物的物理属性；归纳出纳米尺度空化射流诱发和产物剥离的边界条件；建立转换膜物性结构、极间电场和流场分布特性等系统参量对单晶硅阳极锯切面纳米尺度平坦化处理至无穷小量的数学物理模型。

锯切面单晶硅平坦度直接决定最终半导体器件加工性能及使用性能。在对半导体单晶硅平坦化柔性研磨和抛光的研究过程中，通过对微弧氧化系统，磨粒两相流体力学，磨粒弹性力学等深入研究，首先突破了异型复杂结构金属零部件的表面精整(去毛刺，镜面抛光，表面清洁)难题。高精尖金属零部件毛刺脱落使先进机械系统存在失灵、爆炸等重大安全隐患；影响机械系统间隙配合和可靠性；表面毛刺及粗糙度引发液动及气动等流体湍流；刚体接触件磨损加剧；通讯信号干扰和衰减；光学面聚焦及反射性能不足等。.国际制造业前沿尤其国防军工领域，金属零部件向异形、微细和高精度发展。高精尖零部件由于结构复杂性和精度高要求，使得传统接触式手工打磨、机床磨头无能为力。而像化学、磁流体、磨粒流等柔性磨抛虽可有限提高复杂结构通过性，但抛光效果微弱、无法对毛刺及3D粗糙度产生显著改善，并产生诸如倒角、喇叭口等尺寸变形。兼顾柔性、刚性的优点同时实现精度可控是精整的难题(科技日报报道卡中国脖子的35项技术之一）。.基于流体力学、弹性力学及等离子体电化学(微弧氧化)抛光原理，提出两相流(水基+磨粒高速摩擦运动)、微细喷束及液相等离子体电化学三类技术创新。基于原理性创新自主研制出：10余种不同种类的细分设备；百余种微纳磨粒及配比；与零件1:1配套的对流体精确定位和控制的工装；湍流、稳流调控的智能化液压系统；百余种工艺和工序组合使精度可控；液相等离子体系统高频脉冲电源及配套容器、装夹及工艺。实现了单晶叶片气膜孔、太赫兹波导、3D燃油喷嘴及作动器、阵列天线、伺服阀喷嘴等典型器件应用和发展。继而推动了C919飞控、国产长江1000航发、长征火箭、红旗火控雷达、5G/6G通讯等一系列国家重大装备制造的高速发展。通过对金属精整技术的突破，丰富半导体平坦化新的技术手段，以及对化学机械抛光(CMP)中的磨粒及磨削机理起到借鉴作用。