基于AlGaN原子层外延的大功率深紫外发光器件研究

AlGaN based solid state ultraviolet (UV) light source has recently attracted extensive attention due to its wide applications of sterilization, surface modification, biological/chemical analysis, non-line-of-sight communications, and so on. However, the device suffers from severe issues of low light efficiency and low output power in deep UV spectral range, thus a solution overcoming these issues is needed. This project, aiming at high output power deep UV light source, will adopt a novel approach based on an optimized electron-beam pumped method to increase the injection efficiency. This can essentially avoid the p-type doping difficulties in conventional deep UVLEDs. Besides, we propose an active region with enhanced carrier localization using an atomic layer epitaxy technique by MBE, for the purpose of a higher internal quantum efficiency. The light polarization mode will be modified by controlling the quantum confinement and stress state of the active region, as well as a light extraction enhancement technique by a periodic network of grooves in the process of device fabrication. Finally, a high-output-power UV light source with more than 150 mW at UVC spectral range will be obtained.

AlGaN基固态深紫外发光器件是近年来国际上备受关注的热点研究领域，在紫外杀菌净化、紫外固化、生化检测、非视距光通信等方面具有重大的实际应用价值。然而该器件在深紫外波段光效低、出光弱的问题严重制约其进一步发展，寻找一种切实可行的大功率深紫外光源技术方案是本领域的核心问题，对占领深紫外发光器件科技制高点、推动相关产业化具有重要作用。本申请项目以发展大功率深紫外发光器件为目标，通过最优化聚焦电子束泵浦技术有效避免传统UVLED 中空穴注入的难题，为大功率光输出的实现提供根本前提；在高质量AlN模板上采用MBE原子层外延生长技术实现载流子局域化增强的有源区结构，进而抑制非辐射复合提高内量子效率；通过调控有源区量子限制和应力状态，结合表面粗化技术实现TE出光偏振模式的增强，提高光提取效率，最终实现UVC波段大于150mW的大功率深紫外发光器件。

AlGaN基固态深紫外发光器件是近年来国际上备受关注的热点研究领域，在紫外杀菌净化、紫外固化、生化检测、非视距光通信等方面具有重大的实际应用价值。然而该器件在深紫外波段光效低、出光弱的问题严重制约其进一步发展，寻找一种切实可行的大功率深紫外光源技术方案是本领域的核心问题，对占领深紫外发光器件科技制高点、推动相关产业化具有重要作用。本项目以发展大功率深紫外发光器件为目标，通过最优化聚焦电子束泵浦技术有效避免传统深紫外发光二极管（UVLED）中空穴注入的难题，为大功率光输出的实现提供根本前提；在高质量AlN模板上采用原子层外延生长技术制备超薄势阱的AlGaN基多量子阱结构，实现载流子局域化增强的有源区结构，进而抑制非辐射复合，提高内量子效率至61.6 %；通过调控有源区量子限制和应力状态，结合表面粗化技术实现TE出光偏振模式高达80 %，提高光提取效率，最终实现UVC波段出光功率为452 mW，发光效率为5.25 %的高效深紫外发光器件。