CMOS-compatible on-chip optical logic gate is a key element in all optical signal processing that used in long distance optical communications and photonic network-on-chip. Until now, most of CMOS-compatible logic gates are based on silicon waveguide, and performance of them is limited by TPA effect which arise s large nonlinear absorption loss. Therefore, developing new nonlinear platform is the key of good performance of logic gates. In this project, Hydex waveguide is used deal with the high nonlinear loss problem. Research results show that Hydex waveguide has high nonlinear effect, low linear and nonlinear loss, low dispersion with broadband flat dispersion curves. The objective of this project is realizing all optical logic AND and XOR gate for signal that faster than 10Gbps. There are two main advantages: 1) This is the first study of all-optical logic gate based on Hydex waveguide and micro-cavity, which can resolve the problem of high nonlinear loss in the silicon waveguide platform; 2) High-order ring cavity is used to increase the data rate of logic gate and lower the threshold. This project opens up a new direction for CMOS-compatible all optical logic gates. The study of logic gate based on Hydex structure not only has high academic value in on-chip nonlinear optics, but also has practical significance in optical signal processing in future photonic VLSI
CMOS工艺兼容的片上全光逻辑门是实现长距离光通信和片上光子网络全光信号处理的核心器件,然而目前广泛研究的基于硅波导材料的片上全光逻辑门却受限于双光子吸收(TPA)效应,非线性损耗较大。开发新型CMOS工艺兼容的片上非线性光学平台是实现更高性能全光逻辑门的关键。本课题拟采用Hydex波导结构(Nature Photonics, 7: 597, 2013)取代硅波导以解决其非线性吸收问题,以实现>10Gbps信号全光逻辑与门和异或门为目标,主要创新点为:1)首次利用Hydex波导实现全光逻辑门,有效解决材料非线性损耗问题;2)利用高阶微环形腔结构提高逻辑门信号速率同时降低阈值。本课题的研究开辟了CMOS兼容片上全光逻辑门新的研究方向,不仅对微结构中非线性光学领域具有重要的学术价值,同时也为未来全光信号处理提供基础器件支撑,具有更重要的应用价值.
CMOS工艺兼容的片上全光逻辑门是全光信号处理的核心器件,不仅在片上非线性光学领域具有重要的科学价值,同时是未来全光网络系统光信号处理和交换的有效解决手段,可以有效提升信息处理速率和效率,具有重要的学术意义和应用价值。本项目开展了基于新型高折射率差(Hydex)波导与微腔结构的片上全光逻辑门的理论和实验研究,发展建立了基于四波混频的片上逻辑门的理论模型,研究了基于高折射率差波导与微腔的全光逻辑门的关键单元技术;设计并制备了新型高折射率差波导与微腔,搭建了高精度微纳器件自动耦合测试平台,完成了高折射率差波导与微腔的性能测试;研究了基于高折射率差波导与微腔中高效宽带宽四波混频效应及时频域调控技术,并进行了实验验证,突破了光频梳和孤子晶体产生技术;实验研究了SiN微腔中的四波混频、三倍频和三阶和频效应,同时实现了红外与绿光频梳输出;理论研究了基于As2Se3波导中四波混频效应的宽带波长变换技术;理论研究了多光子吸收对微腔四波混频过程的影响,以及正色散区硅基波导中的四波混频效应;探索研究了片上模式转换、相位与振幅调控、自准直等新原理与新技术;实验验证了基于高折射率差波导与微腔的片上全光AND和XOR逻辑门技术。本项目的研究成果为片上全光逻辑门应用于全光网络等领域以及相关科学前沿、战略高技术与交叉学科的创新发展提供了关键理论和技术基础。
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数据更新时间:2023-05-31
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