异质结二维材料红外探测器的光电联合调控机理及应用研究

Infrared thin film semiconductor materials represented by HgCdTe and InSb have been widely used in high performance mid-wavelength infrared detections. However, the preparation of those materials needs high costs, devices based on those materials must work under low temperature, and the focal plane array with those materials suffers from low homogeneity. Currently, high performance infrared detection is under the initial transforming stage from third to fourth generation, and new detection materials and devices are highly in need. In this paper, characterizations and applications of localized-field enhanced two-dimensional material infrared photodetectors is performed. This paper investigates the influence mechanism of different structure parameters on surface-plasmons-enhanced infrared detection photo-coupling efficiency. An enhanced coupled resonator infrared detection by designing the optimal parameter is proposed for further improving quantum efficiency. We will investigate the mechanisms that how localized-field controls the photoelectric characteristics of photodiodes by introducing ferroelectric polarization field, ionic liquid field, space charge induced electric field, and other localized-fields. The spatial distribution and mechanism of localized-field will be precisely determined by the home-made photocurrent scanning microscope. The work in this program will develop 1-5µm wavelength heterojunction two-dimensional material infrared photodiodes under room temperature. Our work provides basic scientific supporting for the development of next generation infrared detection techniques.

以碲镉汞、锑化铟为代表的红外探测薄膜半导体材料，已经广泛应用于高性能中红外探测器中，但是这些材料的制备成本较高、器件需要制冷、大面阵焦平面的均匀性较差。目前高性能红外探测器正处在第三代向第四代跨代发展的起步阶段，急需新的探测材料和器件。本项目拟开展异质结二维材料红外探测器的局域场增强光电探测机理及应用研究。基于表面等离子体激元/谐振腔耦合结构增强红外探测器的光电响应，澄清不同的结构参数对表面等离子体激元结构红外探测器光电耦合效率的影响机理，设计特定波长增强的最优化参数。引入铁电极化场、离子液体场、掺杂空间电荷诱导电场等局域场，揭示局域场对器件的光电调控机理。基于自建的微区光电流面扫描方法，精确定位局域场的空间分布和形成机制。研制出1-5µm的室温工作异质结二维材料红外探测器原型器件，为我国下一代红外探测器技术提供基础支撑。

以碲镉汞、锑化铟为代表的红外探测薄膜半导体材料，已经广泛应用于高性能中红外探测器中，但是这些材料的制备成本较高、器件需要制冷、大面阵焦平面的均匀性较差。目前高性能红外探测器正处在第三代向第四代跨代发展的起步阶段，急需新的探测材料和器件。本项目完成了异质结二维材料红外探测器的局域场增强光电探测机理及应用研究。基于表面等离子体激元/谐振腔耦合结构增强了红外探测器的光电响应，澄清了不同的结构参数对表面等离子体激元结构红外探测器光电耦合效率的影响机理，设计了特定波长增强的最优化参数。引入了铁电极化场、离子液体场、掺杂空间电荷诱导电场等局域场，揭示了局域场对器件的光电调控机理。基于自建的微区光电流面扫描方法，精确定位了局域场的空间分布和形成机制。研制出了1-5µm的室温工作异质结二维材料红外探测器原型器件，为我国下一代红外探测器技术提供了基础支撑。