Cu2ZnSnS4 (CZTS) thin film solar cells have been widely investigated recent years. At present, the cell structure of Cu2ZnSn (S, Se)4 (CZTSSe) as the absorbing layer and CdS as buffer layer is used widely. But the Se and Cd are toxic substances, which can make a great damage to the environment and health. Therefore, it is the important research content of this field to explore absorbing layer material without Se and buffer layer materials without Cd, to develop high efficiency and environmental CZTS based solar cells. In this project, we will adopt CZTS:In as absorbing layer and In2S3 as buffer layer to design and prepare high efficiency and environmental CZTS:In/In2S3 heterojunction thin film solar cells; to explore the physical method and technical way of obtaining high-quality CZTS absorbing layer and In2S3 buffer layer material; to study the influence of In doping on electronic structure, crystal quality, photoelectric properties of CZTS:In films and related physical mechanism; to research the defects in In2S3 buffer layer and its effect on photoelectric properties; to clarify the contact of CZTS:In/In2S3 interface built-in electric field and lattice mismatch as well as the band alignment, and its influence law and mechanism to Voc and conversion efficiency.
Cu2ZnSnS4(CZTS)基薄膜太阳电池近年来一直被广泛的研究,目前,被广泛采用电池结构是以Cu2ZnSn(S, Se)4(CZTSSe)为吸收层,CdS为缓冲层。但Se和Cd有毒,对环境和健康有害。因此,探寻无Se的吸收层和无Cd的缓冲层材料,研制高效、环保的CZTS基太阳电池成为该领域的重要研究内容。本项目提出以In掺杂CZTS(CZTS:In)为吸收层,In2S3为缓冲层,设计和制备高效、环保的CZTS:In/ In2S3异质结薄膜太阳电池;探索获得高质量的CZTS:In吸收层和In2S3缓冲层材料的物理方法和技术途径;研究In掺杂对CZTS:In能带结构、晶体质量、光电性能的影响规律和机制;研究In2S3 缓冲层中的缺陷及其对光电性能的影响规律和机制;阐明CZTS:In/ In2S3界面内建电场与晶格失配、能带排列的关联及其对Voc和转换效率的影响规律和机制。
Cu2ZnSnS4(CZTS)基薄膜太阳电池近年来一直被广泛的研究,本项目利用磁控溅射和溶胶凝胶技术开展In 掺杂CZTS吸收层薄膜的研究工作,阐明了In含量、退火温度和时间对Cu2InxZn1-xSnS4合金薄膜微观结构、光学及电学性能的影响规律和机制;首次制备了Cu2InxZn1-xSnS4基薄膜电池,弄清了In掺杂对CZTSSe太阳能电池Voc和 的影响规律和机制;阐明了硒化温度和时间对In掺杂CZTSSe太阳能电池的影响规律和机制;开展了(Cu1-xAgx)2ZnSn(S,Se)4和Cu2MgxZn1-xSn(S,Se)4吸收层薄膜的研究工作;阐明了Ag、Mg含量对(Cu1-xAgx)2ZnSn(S,Se)4和Cu2MgxZn1-xSn(S,Se)4薄膜微观结构、光学及电学性能的影响规律和机制; 制备了结构为Glass/Mo/Cu1-xAgx)2ZnSn(S,Se)4/CdS/ZnO的薄膜太阳能电池; 阐明了(Cu1-xAgx)2ZnSn(S,Se)薄膜的晶体质量和晶粒尺寸及CAZTSSe/CdS和CAZTSSe/Mo界面的结构对电池光电转换效率的影响规律及机制;另外,设计并制备了新结构的太阳能电池Al/ITO/ZnO/CdS/CZTSSe/WO3/Mo/SLG和Al/ITO/ZnO/CdS/CZTSSe/C/Mo/SLG,阐明了WO3和C层修饰背电极对Cu2ZnSn(S,Se)4基太阳能电池的影响规律及机制。研究成果对高效的CZTS基薄膜太阳能电池的制备具有重要的参考价值和指导意义。
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数据更新时间:2023-05-31
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