掺铒SiOx强室温发光的研究

Efficient light emission from Si-based opto-electronic material is of importance for opto-electronic integrated circuits, but Si is an indirect band gap of semiconductors, its light emission efficiency is too low for the practical use of opto-electronic devices. In the project, Photoluminescence properties of undoped and Er3+ -doped c-Si, a-Si:H,a-SiOx:H and nc-Si/SiO2 were investigated. A variety of techniques including XRD, XPS, HRTEM, Raman and IR spectra had been used for studying the PL and film microstructure. The results showed that Among above Si-based materials PL intensity of Er3+-doped SiOx:H is the strongest under the same measurement condition. The PL intensity of Er3+ -doped SiOx:H was enhanced by 2 orders of magnitude in comparision with that from Er3+-doped crystalline Si.The properties of nc-Si/SiOx was also investigated in detail.The estimated external quatum efficiency of nc-Si/SiOx is approximately 12%, which is much higher than the level ever reached in the published reports for nc-Si/SiOx and also higher than the external quatum efficiency of a high porosity and well oxidation porous silicon.

高效硅基发光材料是发展硅基光电集成的关键，掺铒硅基具有许多独特的特性，对发展光纤通讯具有特别重要的意义。本项目主要研究掺铒SiOx微结构的发光；重点是揭示氧含量对发光特性及SiOx微结构的影响。目的是获得室温强光致发光的SiOx材料的制备和研究氧对掺铒硅基发光增强的机理。