惰性基底上有机半导体薄膜生长的原位实时成像研究

Recent significant progress such as the rise of commercial organic light emitting diode, the high efficiency of the organic photovoltaic and the quite impressive performance of organic transistor made the organic electronic be a promising candidate to compete with the traditional inorganic technology. In the same time, such rapid development requires more precise understanding of the organic semiconductor. The organic semiconductor thin films as the active layer in the organic devices play key roles in determination the device performance. Although impressive improvement achieved on the device performance level, the thin film growth process and film morphology of organic semiconductor are still unambiguous and organic thin film growth mechanism is still being its infant stage. A key point blocked the investigation of organic thin film growth process is the diffcult to real time in situ study, especially on the inert substrate like SiO2 and ITO glass. Here, in this project we are going to setup the real time in-situ study of organic semiconductor thin film growth on inert substrates through a ultra vacuum deposition system intergrated with long focus optical microscopy. Ultize the real time in situ technology, we will mainly focus on the film morphology evolution process of typical organic semiconductor and the coalsence between domains to understand the mechanism of thin film growth, and investigate the film structure evolution through combined with AFM, XRD and TEM characterization; in the other hand, we hope to study the growth process of highly oriented organic semiconductor thin film and explore the control of film morphology. The study in one hand is benefit to the optimization of the device performance and make it easy to commercialize, in the other hand it favors to construct the discipline of organic eletronics

有机电子学的迅速发展对有机半导体的研究提出更细致的要求。有机半导体薄膜作为电子器件的主体是决定器件性能的关键因素。虽然有机半导体器件性能取得了很大的提高，但是有机半导体薄膜的生长过程、形态调控机制依然非常模糊，研究尚处于一个初级阶段。这一领域最关键的一个方面就是有机半导体薄膜生长难以实时原位研究,尤其是在惰性基底上。本项目计划以高真空蒸镀技术搭载长焦距光学显微镜技术实现对有机半导体薄膜在惰性基底上生长形貌的实时原位研究。重点研究典型有机半导体薄膜生长过程，畴界融合等现象并建立有机半导体薄膜生长机理，同时结合结构表征手段如同步辐射X射线衍射，高分辨原子力以及透射电子显微镜研究有机半导体薄膜结构变化；另一方面探索高有序有机半导体薄膜生长过程和形态调控方法。该项目研究有利于有机电子器件优化，以期望进一步实现产业化，同时有助于建立和完善有机电子这一新兴学科。

有机电子学的迅速发展对有机半导体的研究提出更细致的要求。有机半导体薄膜作为电子器件的主体是决定器件性能的关键因素。虽然有机半导体器件性能取得了很大的提高，但是有机半导体薄膜的生长过程、形态调控机制依然非常模糊，研究尚处于一个初级阶段。本项目一方面从表征方法出发以高真空蒸镀技术搭载长焦距光学显微镜技术实现对有机半导体薄膜在惰性基底上生长形貌的实时原位研究，获得初步数据，并根据目前的数据上分辨率不足、衬底低等缺点设计出更适合原位表征的真空系统。另一方面重点研究高有序有机半导体薄膜生长过程和形态调控方法：1)发展了异质核诱导调控有机半导体成核并制备高有序薄膜的方法,并实现了高性能的晶体管和气体传感器件，2）用溶液法获得了高有序取向的有机微纳晶体薄膜，系统研究了这种取向薄膜以及选区生长的机制，3）实现了在活性基地上实现高有序有机半导体薄膜制备并采用扫描隧道显微镜获得了分子级别分辨率的成像图，为进一步精确表征有机半导体薄膜结构和性质提供了途径。该项目研究一方面为有机电子器件优化提供了方法，另一方面为理解有机半导体薄膜生长和性质提供了基础。