全薄膜电致变色储能器件光学-电化学耦合机理研究

Due to the controllable optical tunability, high security, high energy density, and promising flexible application, all-thin-film electrochromic energy-storage devices (AEESDs) provide a desirable technical solution for adaptive military camouflage and portable energy storage. With the development of military camouflage technology in the direction of high precision, light weight, and intelligentization, the relatively low precision of the optical tunability has become a key technical bottleneck of AEESDs. The key to solving this problem is to elucidate the optics-electrochemistry coupling mechanism of AEESDs, and thus to clarify the quantitative relation between them. This project intends to develop the thin-film electrochromic electrode materials (W-Nb oxide anode and LiNi1–2xCoxMnxO2 cathode) with high energy-storage efficiency, and to reveal their electrochromic mechanism, which provides theoretical evidence for studying the optics-electrochemistry coupling mechanism. In addition, by interfacial modification with nano-buffer layers, we will manage to monolithically construct AEESDs with low self-discharge, and thus to limit leakage current of AEESDs, which ensures that precise electrochemical data can be acquired for studies on the optics-electrochemistry coupling mechanism. On this basis, in combination with in-situ optical measurements and analyses, the optics-electrochemistry coupling mechanism of AEESDs will be revealed, which will lay research foundations for the high-precision quantitative optical tunability of AEESDs.

由于可控的光学调制性能、高安全性、高能量密度以及柔性化应用前景，全薄膜电致变色储能器件为自适应军事伪装及便携储能提供了理想的技术解决方案。随着自适应军事伪装技术朝着高精度、轻便化、智能化方向发展，电致变色储能器件较低的光学性能调控精度成为了关键技术瓶颈。解决该问题的关键在于阐明全薄膜电致变色储能器件光学-电化学耦合机理，从而明确两者之间的定量关系。本项目拟探索具有高效储能特性的电致变色型正负极薄膜材料（氧化钨铌负极与镍钴锰三元正极），深入分析其变色机制，为器件光学-电化学耦合机理研究提供理论依据；通过纳米过渡层界面改性一体化构建低自放电型全薄膜电致变色储能器件，限制器件的漏电流行为，从而确保光学-电化学耦合机理研究能够获得精准的实验依据。在此基础上，结合电化学原位光学表征分析，揭示全薄膜电致变色储能器件光学-电化学耦合机理，为其光学性能的高精度定量化调控奠定研究基础。

由于可控的光学调制性能、高安全性、高能量密度以及柔性化应用前景，全薄膜电致变色储能器件为自适应军事伪装及便携储能提供了理想的技术解决方案。随着自适应军事伪装技术朝着高精度、轻便化、智能化方向发展，电致变色储能器件较低的光学性能调控精度成为了关键技术瓶颈。解决该问题的关键在于阐明全薄膜电致变色储能器件光学-电化学耦合机理，从而明确两者之间的定量关系。鉴于此，本项目进行了全薄膜电致变色储能器件光学-电化学耦合机理研究。首先，从理论角度分析了电致变色过程中电化学反应过程与光学性能调控之间的关系，推导了光学与电化学反应的定量耦合关联性。继而，制备了具有高效储能特性的电致变色型正负极薄膜材料（例如氧化钨、氧化镍、锰酸锂），结合实验与理论计算深入分析了其电致变色机制，为器件光学-电化学耦合机理研究提供理论依据。在此基础上，针对电致变色器件存在的漏电流问题，通过纳米过渡层界面改性一体化构建了具有低自放电特性的全薄膜电致变色储能器件，限制器件的漏电流行为，从而确保了光学-电化学耦合机理研究能够获得精准的实验依据。最后，结合电化学原位光学表征分析，揭示全薄膜电致变色储能器件光学-电化学耦合机理，并实现了全薄膜电致变色储能器件的高精度定量化调控。本项目成果将推动光谱控制技术朝高精度定量化调控方向发展，为未来具有严格精确光谱适应性要求的光电应用奠定了基础。