表面等离子体增强的II-VI族半导体纳米光电探测器

The rapid development of information technology has led to the miniaturization of optoelectronic devices with high performance. Recently, Optimization of the optoelectronic device performance without considerably increasing their physical thickness has been become the focus of study. One-dimensional II-VI group nanostructures have been regarded as one of the most important building blocks for future cost-effective and high-performance nano-photodetectors, by virtue of their outstanding optoelectronic properties. However, due to their size, the device based on II-VI group semiconductor cannot absorb sufficient light illumination, which restricts the device performance of the nano photodetectors. Recently, a new strategy to enhance the performance of optoelectronic devices by using surface plasmon of metal nanostructures is receiving increasing interest. This proposal aims to increase the performance of the nano-photodetectors via enhancing the light absorption ability of II-VI group nanomaterials using plasmonic nanomaterials (Cu, In, ITO etc.). We will prepare n- and p-type II-VI group nanomaterials by chemical vapor deposition (CVD) method and construct photo-conductive, p-n junction and Schottky junction photodetectors based on II-VI group nanomaterials using micro/nano fabrication techniques. Metal nanostructures will be introduced into the plasmonic photodetector via micro-fabrication strategies (self-assembled technique, chemical reaction, and nano-imprinting etc) in order to fabricate surface plasmon enhanced nano photodetectors. The relationship between device architectures and performance will be elucidated by comparing the electrical and optoelectrical characteristics before and after metal nanostructures modification, as well as theoretical simulation based on FEM or FDTD. Lastly, on the basis of the above analysis, we will construct photodetectors based on II-VI group nanomaterials with high-performance and low-cost, by optimizing device structures and fabrication techniques. This project will offer technical guidance and fundamental understanding for surface plasmon enhanced nano optoelectronic devices.

现代信息技术的迅猛发展促使光电子器件往微型化、高性能方向发展。如何在不显著增加器件物理尺寸的前提下，大幅提升光电探测器的性能成为当前纳米光电子器件领域的研究热点之一。本项目以一维II-VI族半导体纳米结构这种理想的光探测材料为研究对象。采用自组装、纳米压印、溶液反应等方法在基于一维II-VI族半导体纳米结构的光电探测器结构中引入多种具有表面等离子体的纳米颗粒，通过激励光探测器中光-表面等离子体-电的耦合转换，改善光电子器件对光的吸收，进而提升器件的各项性能参数。通过分析器件表面修饰前后光电性能（如开关比、响应度、响应速度、量子效率等）的变化，并结合器件的光学模拟结果，揭示表面等离子体增强的纳米光电探测器件的工作原理以及器件结构-光学特性-器件性能三者之间的内在联系。

现代信息技术的迅猛发展促使光电子器件往微型化、高性能方向发展。如何在不显著增加器件物理尺寸的前提下，大幅提升光电探测器的性能成为当前纳米光电子器件领域的研究热点之一。本项目在执行过程中以一维II-VI族半导体纳米结构这种理想的光探测材料为研究对象。采用自组装、纳米压印、溶液反应等方法在基于一维II-VI族半导体纳米结构的光电探测器结构中引入多种具有表面等离子体的纳米颗粒，通过激励光探测器中光-表面等离子体-电的耦合转换，改善光电子器件对光的吸收，进而提升器件的各项性能参数。通过分析器件表面修饰前后光电性能（如开关比、响应度、响应速度、量子效率等）的变化，并结合器件的光学模拟结果，揭示表面等离子体增强的纳米光电探测器件的工作原理以及器件结构-光学特性-器件性能三者之间的内在联系。