等离子体增强的高性能铜纳米线/石墨烯透明导电薄膜研究

Transparent conductive film is an indispensible part of electronic products. At present, tin doped indium oxide (ITO) monopolizes the market of transparent conductive films, however,the continuously incresing price and the brittleness hinder their use. Due to their high aspect ratio, high intrinsic conductivity and excellent flexibility, copper nanowires have potential to be used in future electronics as an replacement of ITO. The key issues in the research of copper nanowire-based transparent conductive films is how to enhance their conductance and stability.In this project, we plan to treat copper nanowire thin films with low temperature hydrogen plasma to remove the oxidation layers and organic residues and ehance their conductance; we will reduce graphene-oxide thin films via low temperature plasma treatment, and transfer them onto the top of copper nanowire thin films to improve their stability. The influence of plasma parameters on the morphology, chemical content, and conductance of copper nanowire thin films and graphene-oxide thin films will be investigated systematically. The mechanism of the plasma treatment will be discovered. The optical transmittance, the conductance and the stability of copper nanowire/graphene composite thin films will be characterized. The electron transport mechanism and the anti-oxidation mechanism will be discovered. This project will provide a convenient, environmental-friendly route for preparing copper nanowire based transparent conductive films with high performance, and is of great scientific meaning.

透明导电薄膜是电子产品领域不可或缺的一部分。目前，铟锡氧化物（ITO）垄断了透明导电薄膜市场，但攀升的价格以及脆性限制了其应用。铜纳米线具有高的长径比、优异的本征导电率以及柔韧性，有望取代ITO用在未来的电子产品上。铜纳米线透明导电薄膜研究的关键问题是如何提高其导电性以及稳定性。本项目拟采用低温氢气等离子体对铜纳米线柔性薄膜进行后处理，以除去薄膜表面的氧化层以及有机物，从而提高薄膜的导电性；通过覆盖一层等离子体还原的石墨烯提高薄膜的抗氧化性。系统研究等离子体处理条件对铜纳米线薄膜、氧化石墨烯薄膜表面形貌、成分以及导电性的影响，探讨其相互作用机制。研究铜纳米线/石墨烯复合薄膜的透明、导电性能以及抗氧化性能，探讨其电子传输机制，以及抗氧化机制。本项目有望为制备高性能铜纳米线基柔性透明导电薄膜提供一条快速、绿色的方法，对透明导电薄膜的研究具有重要的科学意义。

本项目针对铜纳米线透明导电薄膜研究中合成方法、后处理方法、抗氧化等核心问题，提出了一种超长铜纳米线的合成方法，并将其扩展至超长银纳米线、铜镍合金纳米线以及铜银合金纳米线的合成，实现了纳米线的直径和长度调控，且实现了纳米线的放大合成，为金属纳米线的应用研究奠定了重要基础。开发了室温等离子体处理，室温化学焊接等后处理方法，可高效清除纳米线表面的残留有机物和氧化层，大大降低纳米线之间的接触电阻，提高薄膜的电导率，为高性能透明导电薄膜的制备奠定了技术基础。探究了铜纳米线的氧化机理，通过将少层石墨烯覆盖在铜纳米线表面阻隔氧气和水分子的通过，大大提高了铜纳米线的抗氧化稳定性，为解决金属纳米材料的氧化问题提供了技术基础。发明了准原位聚合技术，解决了纳米线与衬底结合力的问题，制备了性能优异的柔性、可拉伸透明导电薄膜。. 本项目研发的透明导电薄膜和相关技术课广泛应用在触摸屏、液晶显示、职能窗、光伏器件等电子器件中。另外，该项目实现了多种金属、合金纳米线的可控合成，除了本项目研发的透明导电薄膜，这些纳米线还可以广泛应用在弹性导体、电子皮肤等多种柔性电子器件中以及导电、导热复合材料中。