面向嵌入式系统的TLC NAND闪存存储系统优化技术研究

NAND flash memory is playing a more and more important role in data storage. As a semiconductor-based storage device, it has been wideldy used in embedded systems with its advantages such as small size, shock resistance and low power. TLC (Triple-Level Cell) NAND flash is the most advanced NAND flash technology. By storing three bits per cell, TLC NAND flash can greatly increase the storage capacity and reduce the cost. However, its reliability and I/O performance degrade a lot. To solve these problems, based on the system storage architecture of TLC NAND flash, we aim to construct a theoretical framework and design optimization techniques via the hardware/software codesign methodology in this project. Our research will be divided into the following three tasks: (1) Construct a theoretical framework to model intrinsic relationships of various factors that influence the I/O performance, reliablity and lifetime; (2) Develop cross-layer data management algorithms and techniques to optimize the read/write performance; (3) Design dynamic mode-change techniques to improve the reliability and lifetime of TLC NAND flash. Finally, we will implement an embedded-system prototype with TLC NAND flash, and evaluate our techniques based on it.

NAND闪存(NAND Flash Memory)在数据存储领域扮演着越来越重要的角色，已被广泛应用于嵌入式系统中。TLC NAND闪存作为最新闪存技术，可以大幅提高存储容量并降低成本，但是也带来了可靠性及读写性能的下降。着眼于解决这些问题，本项目将基于TLC NAND闪存存储系统的结构特性，研究面向嵌入式系统的TLC NAND闪存存储系统理论框架和软硬件协同设计优化技术。我们将在以下三个方面开展研究：(1)构建影响TLC NAND闪存存储系统整体运行效能的理论关系模型；(2)基于TLC NAND闪存存储系统的分层存储结构模型，设计跨层数据管理和优化技术，以提高存储系统的读写性能；(3)研究提升存储系统整体运行效能的动态模式转换技术，以提高存储系统的可靠性和使用寿命。最后，我们将在嵌入式系统开发平台上设计实现系统原型并进行实际验证。

NAND闪存(NAND Flash Memory)在数据存储领域扮演着越来越重要的角色，已被广泛应用于嵌入式系统中。然而，闪存容量的提升对闪存的各项效能提出了挑战，包括可靠性及读写性能。着眼于解决这些问题，本项目构建了影响NAND 闪存存储系统整体运行效能各主要因素之间关系的理论模型，以及新型存储器存储系统的系统层次结构模型。基于效能模型，实现了提升存储系统整体的可靠性方案，并建立了新型存储器结构及性能验证平台。本项目达到了预期研究目标，取得了一定的研究成果，为基于非易失性存储器的存储系统提供了一套较完整的解决方案。