ZnO/PET-ITO柔性器件的构设与光电性能调控机理研究

ZnO has attracted great attention due to its potential applications in the fields of ultraviolet laser，light-emitting device and transparent electrode. As a new light-weight flexible structural material, ZnO/PET has great potential applications in flexible electronic devices, high-quality optronics and electronic integration fields. However, the bottleneck problems including poor temperature resistance and stability limit the application. ITO has the similar thermal expansion to ZnO. The high conductivity and transmittance of ITO can enhance photoelectric property and stability of ZnO/PET. In this project, ZnO/PET-ITO composite structure has been fabricated by magnetron sputtering and hydrothermal technique. The formation mechanism of composite interface is revealed, so as to realize the effective control of composite interface and structure. The relationship between the processes, microstructure and properties of the composites has been discussed. By the calculations of band gap, density of states and free energy, the microstructure and lattice have been obtained. Meanwhile, ZnO/PET-ITO heterojunction has been fabricated and the photoelectric mechanism has been investigated. By increasing the electron hole pairs and carrier concentration, the photoelectric performance of ZnO/PET-ITO will be enhanced. This research will provide the scientific basis for performance of photoelectric device, and improvement of efficiency, which has a great potential to satisfy the demand of economy and social development for flexible photoelectric devices.

基于聚对苯二甲酸乙二醇（PET）柔性衬底的ZnO纳米材料有望开辟柔性电子器件、光电子产品及电子集成技术应用的新浪潮，但其耐温性差、性能稳定性不足等问题亟需解决。铟锡氧化物（ITO）热膨胀系数与ZnO相近，具有较高的电导率和透过率，可提高ZnO/PET光电性能的同时大幅度增加其稳定性。本项目拟通过磁控溅射技术和水热法获得ZnO/PET-ITO复合材料，研究其形成机制并实现界面及结构的有效调控和优化设计，建立工艺-结构-性能之间的关联性；借助能带结构、态密度泛函及自由能等理论计算，探析ZnO/PET-ITO微观结构和晶格变化，同时建立制备ZnO/PET-ITO异质结方法及研究其光电机理；通过增大异质结电子空穴对与载流子浓度，提高ZnO/PET-ITO柔性器件的光电性能。本项目研究为国内柔性光电器件的设计与性能调控，以及器件效率的改善提供科学依据，从而更好地满足国家对新型柔性器件的需求。

基于聚对苯二甲酸乙二醇（PET）柔性衬底的ZnO纳米材料有望开辟柔性电子器件、光电子产品及电子集成技术应用的新浪潮，但其耐温性差、性能稳定性不足等问题亟需解决。铟锡氧化物（ITO）热膨胀系数与ZnO相近，具有较高的电导率和透过率，可提高ZnO/PET光电性能的同时大幅度增加其稳定性。本项目采用水热法在PET基底上镀制了透明ITO导电薄膜形成的PET-ITO柔性衬底上生长ZnO纳米结构，研究了工艺条件（反应气氛、反应时间、反应温度、掺杂浓度等）对ZnO纳米结构形成的影响及作用机制，实现了ZnO纳米结构在PET-ITO柔性衬底上可控性生长。利用第一性原理密度泛函理论研究ZnO/PET-ITO复合结构的生长机制，为制备高性能ZnO/PET-ITO柔性器件提供了理论依据。并建立了制备ZnO/PET-ITO异质结方法，研究了其柔性电子器件的光电性能调控机理。优化异质结结构，提高ZnO/PET-ITO光电性能，从而了获得具有优异性能的纳米ZnO/PET-ITO柔性光电器件，这为制备高性能、稳定性的柔性电子器件奠定了基础。