离子注入法与模板法制备人工金属结构表面等离激元与半导体耦合相互作用研究

Surface plasmons, excited on metallic nanostructure/dielectric interface, have attracted great scientific interests due to their applications in enhancement of luminescence efficiency of light-emitting materials and absorption in photovoltaic devices. In the study, we will focus on two kinds of plasmonic structures. First, we research on the formation of metal nanoparticles-SiO2-semiconductor films nanostructural by depositing the semiconductor films on silica substrates implanted with metal nanoparticles. Second, we will get triangular metal nanoparticles array fabricated by nanosphere lithography on the surface of semiconductor films. By analyzing the influence of the wavelength of exciton light, metal nanoparticles size, distribution of metal nanoparticles, the frequency of plasmon, we will research the coupling process between metal nanoparticles and semiconductor films. Theoretical results will be simulated by FDTD method. The research results of the project can be extended to plasmon and semiconductor coupling systems. It will provide a great potential application of photoelectric devices.

本项目通过离子注入法与模板法制备人工金属结构与半导体薄膜复合光俘获材料，将金属纳米颗粒与半导体薄膜二者的优势有机结合起来构筑金属等离激元增强型半导体纳米材料与器件，并提出金属颗粒在半导体薄膜之上和之下两种模型结构。通过研究金属纳米颗粒中表面等离激元共振与半导体薄膜耦合的调控作用，揭示表面等离子激元对半导体光吸收和散射的调控规律以及物理机制。通过实验设计和理论模拟金属纳米颗粒的几何尺寸等参数，实现等离子激元共振频率与半导体带隙的高效共振匹配，为进一步研究金属纳米颗粒中表面等离子激元振荡与半导体薄膜的耦合机理提供必要的理论和实验依据，为光电转换器件的性能优化和实际应用提供有效的依据。

本项目通过离子注入法与模板法制备人工金属结构与半导体薄膜复合光俘获材料，将金属纳米颗粒与半导体薄膜二者的优势有机结合起来构筑金属等离激元增强型半导体.纳米材料与器件.使用银离子注入硅衬底结合退火工艺制备出了干净、均匀、稳定的SERS基底。单层石墨烯增强、双层石墨烯抑制的等离激元驱动表面催化反应，对于理解分子、石墨烯和金属结构间具有重要意义。从离子注入出发，在SiO2薄膜中内嵌入钨颗粒由此提高其阻变性能。由于离子注入技术是一种工业上广泛应用的技术，再者二氧化硅基的存储器件能够很好兼容现行的硅工艺，因此本文所述的钨注入二氧化硅基的阻变存储器对于制备商用的存储设备有一定的潜在应用价值。通过对介电层进行离子注入，可有效的降低器件的阈值电压，并提高阈值电压的稳定性。该方法为调控器件阈值电压提供了一种新的思路。