SOI基40G多波长单片集成接收芯片基础研究

40G multi-wavelength receiver chip is a vital part for short-range data communication, especially for cloud computing data center core network. And higher capacity and integration for transmission channel can be achieved in wavelength division multiplex (WDM) optical interconnection. An extremely important part of the optical interconnection system is monolithic integrated multi-wavelength receiver, which used WDM to realize higher acception speed. A compacted multi and narrow channel interval WDM/ demultiplexer can be achieved by etched diffraction grating (EDG). On the other hand, Si based high speed Ge detector was also an important part of the multi-wavelength receiver, which was compatible with the Complementary Metal-Oxide-Semiconductor (CMOS) process technology. An arrayed photonic crystal mirrors (PCMs) were used as the reflected gratings in the EDG in this research. The Ge detectors were fabricated by ultra high vacuum chemical vapor deposition (UHV/CVD) at the outputs of EDG. And the multi-wavelength receiver was consisted by these two parts. By the research and fabrication of the receiver, the research ability of silicon-based optical interconnect system was strengthened, and the competitive of miniaturization and high level integration optoelectronic devices was improved

40G多波长接收芯片是短距离数据通信，特别是云计算数据中心核心网络极其重要的一部分，采用WDM技术实现芯片高速多波长接收。EDG更容易实现紧凑型窄信道间隔、多信道数的波分复用/解复用；另一方面，硅基高速Ge探测器是实现单片集成型多波长接收器的关键器件。Ge材料器件与现有的Si CMOS工艺有效兼容方面具有明显优势和极大的潜力。 本项目采用光子晶体反射镜替代EDG中的光栅槽，制作出光子晶体反射阵列EDG，并采用UHV/CVD系统在EDG的输出波导上选区外延生长Ge材料，制作成高效硅基Ge波导探测器，研制出单片集成多波长接收器。单片集成多波长接收器的研制，可以增强我国在硅基光互连系统研究能力，提高我国小型化、高集成度光电子器件的竞争力。

随着数据通信和互联应用等对带宽的要求越来越大，人们越来越重视数据中心及高性能计算应用的带宽和密度。光集成技术成本低、体积小巧、易于大规模化地装配生产、工作速率高、性能稳定，是未来光器件的发展方向，近年来一直是业内关注和研究的焦点。40Gbps多波长接收芯片是40Gbps光模块重要组成部分，利用它可以实现光模块高度集成的小封装。本项目研究纳米线波导单模传输条件、光子晶体及反射镜设计等基础问题，采用电子束光刻和ICP刻蚀工艺制作出EDG，采用光子晶体反射镜替代EDG中的光栅槽，制作出光子晶体反射阵列EDG，采用UHV/CVD系统在EDG的输出波导上选区外延生长Ge材料，制作成高效硅基Ge波导探测器，实现EDG串扰15dB，插损减小3dB，Ge波导探测器光响应度约为0.9A/W，眼图测试表明传输速率＞30Gbps，研制出单片集成多波长接收器；研究阵列波导光栅及平坦化、45°全反射面制作、混合集成工艺实现等基础问题，通过AWG输出端45°抛光工艺处理，实现光转90°，最终制备出混合集成4×10G接收芯片。小信号测试结表明3dB带宽大于17GHz，眼图测试表明，在25Gbps的传输速率下眼图仍然张开饱满，单片/混合集成多波长接收器的研制，对增强我国光集成技术研究能力，提高我国小型化、高集成度光电子器件的竞争力和实现我国信息网络技术的自主创新和产业化具有重要意义。