拓扑绝缘体量子点表面激子特性及调控

Excitons on the surface of the topological insulator quantum dot has a great impact on investigation of the carrier transport in the topological insulator quantum dot. First, we study the influencing mechanism of energy level distribution, the band lineup, physical parameters, and structural parameters on the distribution of the wave function, overlap integral and carrier transport in the topological insulator quantum dot, revealing physical laws of exciton behavior. Then, we analyze the effect of carriers distribution in the excited-state on carriers distribution in the ground state. The influences of the overlap of electron and hole wave functions, exciton interactions, and Coulomb interactions on optical properties in of the topological insulator quantum dot are investigated. On the basis, we investigate the regulation and control method of excitons on the surface of the topological insulator quantum dot by outfield and effect characteristics of outfield on the band lineup and the overlap integral in order to obtain the characteristics of excitons behavior in the process of outfield tuning. We analyze the changing mode of excitons behavior in the tuning process of outfield according to interface structure and characteristics of core-shell energy. To reveal the physical laws, microscopic transport and the optical characteristics in the topological insulator quantum dot are investigated in detail.

拓扑绝缘体量子点表面激子对研究拓扑绝缘体中载流子输运特性具有重要意义。本项目拟进行如下研究：首先研究拓扑绝缘体量子点中能级分布、能带补偿、物理参数、以及结构参数等对波函数分布、交叠积分和载流子输运的影响机制，揭示激子行为的物理规律；其次分析激发态载流子分布对基态载流子分布的影响，基态与激发态的电子和空穴波函数叠加、激子相互作用、以及库伦相互作用等对拓扑绝缘体量子点光电特性的影响规律；在此基础上，研究拓扑绝缘体量子点表面激子受外场调控，探求外场对能带排布的影响特点、以及对交叠积分的影响方式，获取外场调控过程拓扑绝缘体量子点表面激子行为影响规律。针对拓扑绝缘体量子点中界面结构和核壳能级特点，分析拓扑绝缘体量子点表面在外场调控过程表面激子的变化规律。深入研究外场调控对拓扑绝缘体量子点电荷迁移过程和光电特性的影响，揭示其物理规律。

首先研究拓扑绝缘体量子点中能级分布、能带补偿、物理参数、以及结构参数等对波函数分布、交叠积分和载流子输运的影响机制，揭示激子行为的物理规律；其次分析激发态载流子分布对基态载流子分布的影响，基态与激发态的电子和空穴波函数叠加、激子相互作用、以及库伦相互作用等对拓扑绝缘体量子点光电特性的影响规律；在此基础上，研究拓扑绝缘体量子点表面激子受外场调控，探求外场对能带排布的影响特点、以及对交叠积分的影响方式，获取外场调控过程拓扑绝缘体量子点表面激子行为影响规律。针对拓扑绝缘体量子点中界面结构和核壳能级特点，分析拓扑绝缘体量子点表面在外场调控过程表面激子的变化规律。深入研究外场调控对拓扑绝缘体量子点电荷迁移过程和光电特性的影响，揭示其物理规律。.本项目按原计划顺利开展了相关研究工作，达到了预期目标。系统研究拓扑绝缘体纳米结构中载流子输运特点对量子受限结构中激子行为的影响规律；研究了拓扑绝缘体纳米结构中外场对能带排布的影响特点、以及对交叠积分的影响方式，获取外场调控过程拓扑绝缘体量子点表面激子行为影响规律。三年来累计发表论文10篇，其中SCI收录论文8篇，其中发表《Nano Research》1篇（影响因子6.963）， 《AIP Advances》1篇（影响因子1.524）， 《Int. J. Electrochem. Sci.》 3篇（影响因子3.729）。