双表面等离子波共振腔纳米图形产生和成像光刻技术

High performance nanoscale optoelelctric materials and/or devices are fundamental and common needs for all emerging strategic industries including clean and sustainable energy, next-generation display and optoelelctronic IT technologies. Exploration and investigation on efficient and flexible fabrication methodology of various nanostructures for different applications and the corresponding physical mechanism is key and indispensable in the whole industrial chain, which has been a hot research topic in both academic and industrial societies. In this project, we propose a novel nanostructure pattern generation and imaging photolithography technique using dual surface plasmonic resonant cavities. The major parts will include: (1) Investigating the characteristics and the physical behaviors of the dual surface plasmonic resonant cavity system and the physical mechanism as well as the implementation conditions of the tunable ultra-deep subwavelength nanostrutures (30nm-200nm tuning range) and imaging photolithography of arbitrary nanopatterns; (2) Establishing quantitative relationships between the pattern dimension / orientation of generated nanostructures and various structural/geometrical parameters, including the cavity length, in-cavity material, the mode of incident light, such as wavelength, polarization state, and the properties of the cavity walls, and the active design and optimization method based on the quantitative relationships among these parameters; (3) Setting up an experimental UV photolithography apparatus and building up appropriate experimental processes to implement the proposed tunable nanostructure generation and imaging photolithography of arbitrary nanopattern technique. Fabrication of period 30-200nm nano-grid polarizing devices and the photolithography of arbitrary pattern with a linewidth of less than 45nm will be demonstrated. This technique will provide a new way and key technique for efficient fabrication of nanoscale devices.

纳米尺度光电子器件是新兴战略产业（新能源/新型显示/光电信息）的重大共性基础问题，探索高效纳米结构产生与光刻加工方法，是新型纳米器件研发的客观要求和国际研究热点。本项目提出一种基于双表面等离子共振腔的可调谐纳米结构产生机理和任意纳米图形的成像光刻技术与实验方法。重点研究（1）双表面等离子共振腔的特性以及产生可调谐深亚波长结构（周期30-200nm可调）和任意图形的成像光刻（特征线宽45nm以下）的物理机理和条件（2）纳米图形排布和成像光刻分辨率及光刻焦深与共振腔腔长、腔内匹配介质、入射光偏振态和各腔极板材料与表面特性等因素的关系和主动优化设计方法（3）建立可调谐纳米结构产生和任意纳米结构图形成像光刻的双共振腔紫外激光直写实验装置和工艺，实现30-200nm周期结构偏振器件的可调谐制作和线宽小于45nm任意图形的成像光刻，形成有特色纳米制造技术和工艺方法,为纳米器件研究提供关键技术和理论。

本项目系统研究了基于表面等离子激元共振腔的深亚波长超透镜成像光刻技术以及表面等离子激元在光场操控中的应用。提出了基于像方表面等离子激元共振腔的超深亚波长超透镜成像技术。研究表明，与传统开放式超透镜成像系统相比，成像质量显著提高，成像焦深比传统系统大10倍左右。理论上建立了像方共振腔超透镜系统的成像传递函数，获得了成像分辨率与共振腔长的定量关系。在银腔模式及共振腔最优腔长条件下，系统的传递函数比开放式系统更加平坦。像方光场被显著放大并扩展到整个像方区域，成像线对的分辨率可达λ/24。进一步提出了由物方共振腔和像方共振腔组成的双表面等离子体共振腔的超透镜成像系统。理论上获得了双腔表面等离子超透镜系统的光学传递函数并详细分析了其物理机理。由于物方和像方共振腔的相互作用，双腔结构可大大增强物体的瞬逝波强度，并更有效地抑制长程等离子波模式，放大短程等离子波模式，更好地抑制旁瓣效应，从而显著提高成像质量。上述结果为任意图形的超分辨和大焦深的成像光刻提供了新的方法。基于表面等离子激元效应，提出了基于Kretschmann 和Otto表面等离子激元混合结构的可调谐纳米结构产生和光刻技术以及基于表面等离子激元共振腔的超分辨显微成像技术；研究了金属-介质-金属（MIM）表面等离子共振腔的亚波长矩形环阵列和超薄亚波长缺角矩形环阵列表面等离子激元的位相调控机理以及在偏振波片和高效偏振出光LED中的应用，包括多层纳米介质/金属光栅的GaN基偏振出光器件，集成超表面高效高偏振出光GaN基LED器件，基于荧光陶瓷及纳米光栅的白光LED偏振出光理论与实验，以及基于表面等离子激元效应的空间金属三维手性结构的圆偏振二色特性及实验研究。上述研究结果为实现表面等离子激元效应对光传输过程中光场的振幅、位相、偏振态、传输方向及能量效率的灵活操控和应用提供了坚实的物理基础。