脉冲激光沉积技术制备AlSb薄膜及其高效新型太阳电池的应用基础研究

After years of development,solar cells has been made great achievements,there are still some high cost of electricity and other economic problems,and reducing the cost lies in improving the conversion efficiency of solar cells.Therefore,the development of new and efficient battery materials, reducing the use of precious and toxic materials containing Cd have been become the top priority and selection principle.ZnS is a wide band gap n-type semiconductor material,Eg of AlSb is 1.65eV,and the theory conversion efficiency of p-AlSb thin-film solar cells is similar to CdTe solar cells(~30%),so the cheap cadmium-free solar cells materials is worth studying.After consideration of this selection principle and band analysis,the cadmium-free(FTOglass/n-ZnS/p-AlSb/p+NiSb/Ni)thin films solar cells will be fabricated by the 248nm KrF pulsed laser deposition,post-processing and plating Ni electrode in the same chamber,and the efficiency of 0.071cm2 cell is high to 14%,close to the high efficiency of the compound thin film solar cell in China.It can be predicted,after being studied on this cadmium-free cheap compound thin films solar cells,many scientific problems and prospects for applied research will be generated.

太阳电池经多年发展，仍存在造价高等经济问题，降低光伏发电成本的关键在于提高电池的转换效率。故开发新型高效的电池材料、减少含Cd等有毒贵重材料的使用，则成为降低发电成本、提高太阳电池转换效率的当务之急和选材原则。ZnS是宽禁带n型半导体材料；AlSb能隙1.65eV，其薄膜太阳电池的理论转换效率与CdTe薄膜太阳电池相近(约30%)，是很值得研究的廉价无镉太阳电池材料。经过选材原则和能带分析考量，本项目拟采用248nmKrF脉冲激光沉积、同室后处理及镀电极技术，在FTO衬底上同腔室制备AlSb薄膜太阳电池，其基本结构为FTOglass/n-ZnS/p-AlSb/p+NiSb/Ni；技术指标是使面积为0.071cm2的AlSb基薄膜太阳电池光电转换效率达到14%，接近我国化合物半导体薄膜太阳电池的高效率。可以预见，这种无镉廉价化合物薄膜太阳电池的研制，将会产生丰富的科学问题和应用研究前景。

新能源产业方兴未艾，开发新型高效的半导体光伏材料、减少含Cd等有毒贵重材料的使用，则成为降低发电成本、提高太阳电池转换效率的当务之急和选材原则。AlSb能隙1.65eV，其薄膜太阳电池的理论转换效率与CdTe薄膜太阳电池相近(约30%)，是很值得研究的廉价无镉太阳电池材料。经过选材原则和能带分析考量，本项目采用248nmKrF脉冲激光沉积、同室后处理及镀电极技术，在FTO衬底上同腔室制备AlSb基薄膜太阳电池。具体内容有：采用KrF-PLD脉冲激光沉积技术和同室后处理技术，制备出可用于太阳电池的p-AlSb或p-AlSb:Zn多晶薄膜；射频磁控溅射法制备AlSb薄膜；Sb2Te3薄膜的PLD法制备及表征；PLD法沉积制备AlSb/Sb薄膜及其潮解性质研究；磁控溅射法制备Sb/Ni复合薄膜及其性质研究；使用浆料法，制备AlSb的厚膜。参加了三次国内学术会议、一次国际学术会议。在国内外著名学术刊物上发表14篇SCI论文。获得1项国内授权发明专利。已培养1名博士生、8名硕士生、出站1名博士后；在读博士生3人、硕士生8人。努力尝试研制p-AlSb基新型化合物半导体薄膜太阳电池，有光伏效应，测得Voc等数据。这是世界上少有的制备AlSb太阳电池的尝试工作。虽然没有完全成功，但也为以后的研究奠定了坚实的基础。