The aim of the project is to solve performance degradation of magnetic controlling components in nuclear plant reactor core, which are claw parts that may show motion delay or even stagnation in their long duty cycles. High power impulse magnetron sputtering technique is employed to deposit Cu/Nb nanomultilayer films with enhanced hardness. The radiation resistance of the films is enhanced by elastic stress field by controlling sink efficiency and sink strength together with wear resistance of the claw parts. The high ionized plasma was produced by high power impulse magnetron sputtering technique with controlled chemical composition, energy, flux and motion trajectories can precisely regulate Cu/Nb sublayer nucleation rate and growth rate, and Cu/Nb nanomultilayer films with different modulation period and misfit degree can be grown coherently. High-intensity pulsed ion beams with ion energy of 100-400 keV and flux density of 1014 ions/pulse was used to irradiate Cu/Nb nanomultilayer films. The relationship of misfit dislocation or vacancy density on elastic stress field is established for semicoherent Cu/Nb nanomultilayer films, and the effect of elastic stress film on defect absorption is revealed. The film design principle to meet the radiation and wear resistance for nuclear equipment can solve the performance degradation of claw parts and other key components under long duty cycles.
针对核电站反应堆芯磁力提升控制棒核心运动机构—钩爪部件超长使役过程中存在的动作延迟甚至停滞的性能退化问题,本项目采用高功率脉冲磁控溅射沉积具有硬化作用的Cu/Nb纳米多层薄膜,通过纳米多层薄膜交变应力场增强辐照界面缺陷吸收效率和吸收强度作用,提高覆层钩爪部件的耐磨损抗辐照复合性能。利用高功率调制脉冲超高离化等离子体可控的化学组成、能量、束流和运动轨迹,精准调节Cu/Nb亚层薄膜形核率和生长速度,沉积不同调制周期和错配度的共格特征Cu/Nb纳米多层薄膜。利用离子能量100-400 keV、束流密度1014离子/脉冲的强流脉冲氢离子束辐照Cu/Nb纳米多层薄膜,建立半共格Cu/Nb纳米多层薄膜辐照诱发缺陷错配位错和空位密度与交变应力场变化关系,揭示调控的弹性应力场吸收辐照缺陷的作用机理。提出满足核电装备抗辐照覆层的耐磨损抗辐照设计原则,解决钩爪部件等关键零部件超长使役条件下的性能退化难题。
针对核电站反应堆芯磁力提升控制棒核心运动机构—钩爪部件超长使役过程中存在的动作延迟甚至停滞的性能退化问题,本项目采用高功率脉冲磁控溅射沉积具有硬化作用的Cu/Nb纳米多层薄膜,研究了工艺特征参数与放电的相关性,明确了等离子体的组成分析与控制,利用偏析焓和混合焓分析了Cu-Nb薄膜的热稳定的热力学判据,建立了时域特征下的Cu、Nb薄膜生长的可控原理,实验和模拟分析Cu-Nb薄膜稳定性机制和耐辐照机理,建立了工艺技术与材料性能之间的关联规律。
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数据更新时间:2023-05-31
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