禁带宽度梯度化的半导体薄膜光电极的制备及性质研究

A kind of grandient bandgap semiconductor photoelectrode is designed to achieve both photoelectrochemical stablity and visible photoresponse. The relationship between the composition and the bandgap of the solid solution semiconductor is studied. It is found that the bandgap of the solid solution films changes continuously with their composition. Ti1-xVxO2 solid solution films with bandgap ranged from 2.1 eV to 3.05 eV are obtained. Sol-gel method is employed to prepare the grandient bandgap Ti1-xVxO2 film photoelectrodes. The results of the measurements of the crystallization, optical and electrical properties show that (1) the crystalline intensity increase, (2) the optical absorption edge shifts to longer wavelength, and (3) the resistivity decrease, with the increasing x. The photoelectrochemical studies indicate that grandient bandgap photoelectrodes with both photoelectrochemical stablity and visible photoresponse are acjieved

提出制备湿式太阳能电池用的禁带宽度梯度化的半导体薄膜光电极的设想。用溶胶凝胶法研究禁带宽度梯度化的半导体薄膜电极的制备机理，阐明禁带宽度梯度化对半导体电极的电性能和光电化学性质的影响规律，得到导电性能好并兼有光电化学温度性和可见光吸收性的高转换率半导体电极。为开发高效率的太阳能电池提供基础，促进我国新能源的开发。.