p-MgNiO/立方相n-MgZnO异质结界面特性、物性调控及其深紫外发光器件研究

Wide band gap semiconductor materials are special concerned for their important application prospect in deep UV light-emitting devices. This project would carry out preparation of p-MgNiO/cubic n-MgZnO heterojunction, and would explore interface characteristics, properties modulation and deep UV light-emitting device for p-MgNiO/cubic n-MgZnO based heterojunction.The heterojunctions would be prepared by pulsed laser deposition method.Combined first-principle calculation with morphology and optoelectronic characterization means to investigate the interface structure, charge transfer and interface barrier formation mechanism for the p-MgNiO/cubic n-MgZnO heterojunction. The influence of interface states on the carrier transport should be determined.The deep UV light-emitting devices with active layer of p-MgNiO/cubic n-MgZnO heteojunction are designed upon considering both doping engineering,band engineering and processes reglation.Preparation technologies, structure parameters, contact characteristics and interface characteristics would be investigated in detail for analysing their impact on the optoelectronic properties of the device.By virtue of energy band structure for the heterojunction with different Mg content, the mechanisms of light-emitting would be elucidated. Dynamic processes in the device, such as the carrier injection, transport and recombination,also would be determined.It would provide theoretical and technological support by systematic research on this project for achieving high performance deep UV light-emitting p-MgNiO/cubic n-MgZnO based heterojunction devices.

宽带隙半导体材料因其在深紫外发光器件中的重要应用前景而备受关注。本项目拟开展p-MgNiO/立方相n-MgZnO异质结的制备、界面特性、物性调控及其深紫外发光器件的研究工作。采用脉冲激光沉积方法制备薄膜异质结，结合第一性原理计算和形貌及光电等试验表征手段，详细研究MgNiO/立方相MgZnO异质结的界面结构、电荷转移和界面势垒的形成机制，确定界面态对载流子输运的影响；通过掺杂工程、能带工程以及制备工艺调控实现以p-MgNiO/立方相n-MgZnO为有源层的深紫外发光器件；研究薄膜生长工艺参数、结构参数、接触特性和界面特性等对器件电学和光学性能的影响；研究异质结中不同Mg组分时的能带结构，分析器件发光机制；确定器件中载流子注入、输运、复合等动力学过程。期待该课题的开展，能为高性能MgNiO/立方相MgZnO异质结深紫外发光器件的实现和研发提供理论依据及技术支撑。

宽带隙半导体材料因其在紫外发光器件中的重要应用前景而备受关注。本项目执行期间，制备了Ag/ZnO微米棒/Ag肖特基型MSM结构高电流增益(5伏偏压时达到1.5×105)和快速响应(4×104A/W)紫外光电探测器；通过对界面特性、界面势垒的形成机制和器件中载流子的注入、输运等过程分析，说明了该肖特基紫外光响应器件的高光电流增益归因于器件独特的肖特基接触结构和微米线六重对称产生的回音壁模增强效应。利用气相传输方法，制备了Sn掺杂诱导生长的ZnO微米碟和螺旋位错驱动生长的Sn掺杂ZnO微米小丘结构，讨论了它们的生长过程，分析了它们的生长机理，测试了它们的光学特性，确定了它们的光学激子动力学特性，光学特性行为与它们的特殊结构密切相关。从能带工程角度出发，设计和制备了能带可调CdS1-xSex微米带激光腔，通过组分调节，实现了光泵浦条件下的Fabry-Perot输出模式可见光波段颜色可调的微激光。利用第一性原理深刻探讨了能带结构及其载流子特性。利用有限元数值计算了微腔内的激光模式，有效解释Fabry-Perot激光模式的产生机制。项目研究结果一方面探索了界面特性、掺杂工程、能带工程和制备工艺对宽禁带半导体材料应用的重要影响；另一方面为本课题还没有完成的工作的继续深入开展做好了铺垫。