高性能碳基瞬态电子器件和集成电路

Transient electronics are focused on electronic devices and systems with the characteristics that can vanished with certain manner at programed speed. It has great application impacts on medical monitoring environmental monitoring and national security, etc. Current research is still focused on the material level. The performance of the devices is far below the performance achieved in traditional electronic devices, which can’t meet the real application requirements. The objective of this project is to develop high-performance transient electronic devices and integrated circuits. Carbon based materials are chosen as the conductive channel. High-performance carbon based transient electronic devices and integrated circuits will be explored from the aspects of materials matching, working mechanism discussion, device design, process optimization and system design, etc. The research includes: 1) exploration of the matched electrode materials, substrate materials, dielectric materials, and packaging materials for high-performance carbon based transient electronic devices, and the corresponding compatible fabrication process. Realizing transient field effect transistors with mobility greater than 100 cm2/V.s, and on/off ratio larger than 5 orders; 2) research on the changing characteristics of key components’ physical morphology and device’s performance under different sets of testing environments, and understanding the underlying working mechanism; 3) realization of devices with vanish speed at different time scale by combining with material selection, device design and packaging technology; 4) demonstration of transient integrated circuits, including NOT, NAND, NOR, XOR, and half adder.

对按设定速度以确定方式消失的电子器件与系统的研究，即瞬态电子学。它在医疗监控、环境监测以及国防安全等领域都具有重大意义。当前研究仍主要集中在材料层面的探索，器件性能与传统半导体器件相比差距较大，无法满足真正应用需求。本项目的目标是发展高性能瞬态电子器件和集成电路，拟以碳基材料作为器件导电通道，从材料匹配、机理探索、器件设计、工艺优化到系统设计展开全方位研究，探索高性能碳基瞬态电子器件和集成电路。研究内容包括：1）探索与高性能碳基瞬态器件匹配的电极材料、衬底材料、栅介质材料和封装材料，以及兼容的制备工艺，得到迁移率>100 cm2/V.s, 开关比 >5个量级的瞬态场效应晶体管；2）研究关键部件物理形态和器件性能在不同设定环境下随时间的变化特征和物理机制；3）结合材料选择、器件结构设计以及封装技术等实现在不同时间尺度下的器件消亡速度；4）展示非门、与非门、或非门、异或门和半加器等瞬态电路。

实现高性能的瞬态电子器件和集成电路，对于构建功能完备的瞬态集成系统满足真正的应用需求尤为关键。本项目以碳纳米管材料作为沟道材料，以实现高性能的瞬态电子器件和集成电路为目标，研究了与水溶性衬底兼容的加工工艺、与碳管材料匹配的瞬态电极材料、栅介质材料和界面缓冲材料等，最终发展了两套了成熟完备的用于瞬态器件的加工转移工艺，分别对应于湿法和干法的加工环境，通过优化，实现了4寸的加工能力，器件转移的成功率达到100%，器件的产率平均可以达到96.6%，所得到的瞬态场效应晶体管的迁移率可以达到100 cm2/Vs，器件开关比大于5个量级。基于高性能的瞬态晶体管器件，完成了非门、与非门、或非门、异或门和半加器等瞬态电路的制备，并与传感器集成构建了用于环境监测的瞬态传感系统。