长波远红外探测器用锰钴镍氧化物薄膜的光电性质研究

Manganese cobalt nickel oxide thermistor detecting materials with 200 nm-50 um wide response wave band, has important applications in the aerospace for long wave infrared detection in home and abroad. But the research on thinfilm materials started late, in recent years, we have prepared stable and compact manganese cobalt nickel oxide thin films both by chemical solution deposition method and magnetron sputtering method. The temperature coefficient of resistance at room temperature of the film has achieved -4.2%/K. However, the electrical and optical properties of the thin films have not been studied in-depth. In this project, we will focus on the following work: study the influence of processing conditions and substrate on the crystalline state, electrical and optical properties of the manganese cobalt nickel oxide thin films; adjusting the cation ratio and doping Cu, Zn, Fe separately, investigate the relationship between the electrical and optical constants (the temperature coefficient of resistance, the resistance at room temperature, the band width, the absorption coefficient etc) and the cation distribution, the valence of impurity, and lucubrate their operating mechanism; explore the process conditions and cation ratio, in which the thin films have the maximum room temperature coefficient of resistance. The results of the project do not only provide theory basis to optimize the electrical and optical properties of the manganese cobalt nickel oxide thin film, but also useful to develop a new generation of long-wave far-infrared detector, and also have a certain reference value to understand the conductive mechanism of the manganese cobalt nickel oxide film and some other scientific issues.

锰钴镍氧化物热敏探测材料具有200 nm-50 um宽的响应波段，在国内外航空航天等长波远红外探测中得到重要应用。但薄膜材料的研究起步较晚，近年来，我们利用化学溶液沉积法和磁控溅射法，成功制备了稳定、致密的锰钴镍氧化物薄膜，其室温电阻温度系数达到-4.2 %/K，然而缺乏对薄膜电学及光学性质的深入研究。本项目重点分析：工艺条件、衬底对锰钴镍氧化物薄膜结晶状态、电学及光学性质的影响；调整阳离子配比、分别掺杂Cu，Zn，Fe元素，考察锰钴镍氧化物薄膜电阻温度系数、室温电阻率、禁带宽度、吸收系数等电学及光学常数与阳离子分布、杂质价态之间的关系，深入研究其作用机制；探索使锰钴镍氧化物薄膜室温电阻温度系数最大的工艺条件和配比。项目研究成果不仅对优化锰钴镍氧化物薄膜的电学与光学性质、研制新一代的长波远红外探测器提供理论依据，对深入理解锰钴镍氧化物薄膜的导电机制等科学问题也具有一定参考价值。

锰钴镍氧化物热敏探测材料具有200 nm-50 um宽的响应波段，在热敏红外探测、温度传感、航天遥感探测等领域有着广泛应用，它们对高性能的锰钴镍氧化物材料和器件提出了更高的要求。.本项目研究了：化学溶液沉积及磁控溅射两种方法制备的高质量锰钴镍薄膜材料结构及电学性质；厚度变化对锰钴镍薄膜结晶性及电学性质的影响，薄膜295 K时TCR值达到-3.8 %/K；退火对锰钴镍薄膜中红外及可见近红外光学性质的影响；阳离子分布与锰钴镍薄膜电学及磁学性质的关系；铜掺杂锰钴镍薄膜红外探测器制备与性能；高质量的锰钴镍纳米薄膜的制备、结构及性质分析；用于红外探测及热成像的锰钴镍薄膜型非制冷测辐射热计，响应率达到330V/W，等效噪声功率3.7×10-10W/Hz1/2@30Hz，探测率达到0.6×108cmHz1/2/W；背入射浸没式MCN薄膜器件制备及性能表征，响应率RV= 3.2×103 V/W，探测率D*=9.2×108 cm•Hz1/2/W，时间常数τ=7.3 ms，与非浸没式器件相比性能提高很多。.已经发表SCI论文10篇，已经授权的发明专利3项；协助培养博士生2名，超额完成考核指标。.项目研究成果不仅对优化锰钴镍氧化物薄膜的电学与光学性质、研制新一代的长波远红外探测器提供理论依据，对深入理解锰钴镍氧化物薄膜的导电机制等科学问题也具有一定参考价值。.