氧化锌/IIIA金属多层交替结构的界面磁性研究

Diluted Magnetic Semiconductors, due to their utilities of manipulation of both the charge and spin of electrons and thus the integration of data processing and magnetic storage on a single chip, are promising materials for spintronics devices. This project is proposed to address the problems of current research on the topic of magnetic semiconductor with non-magnetic elements doping: weak magnetism and unclear mechanism behind the origin of ferromagnetism. We propose a model of multilayer structures of alternate ZnO and IIIA metal films，and the interface magnetism of semiconductor/IIIA metal will be enhanced in this multilayer structures and spin of electrons in semiconductor layer will be polorized with interlayer ferromagnetic coupling.Combining experimental methods and theoretical modeling, we will systematically investigate the charge-transfer behavior and the origin of the ferromagnetism in the interface of the ZnO/IIIA multilayer structures, and experimentally realize strong ferromagnetism at room temperature from this multilayer structure. Finally, we will prepare carrier-polarized semiconductor thin films with low resistivity, high carrier mobility, which can be potentially used in novel spintronics devices.

稀磁半导体，由于同时利用了电子的电荷特性和自旋特性，将半导体的信息处理与磁性材料的信息存储功能融合在一起, 是实现自旋电子器件的理想材料。本申请项目拟针对目前非磁性元素掺杂稀磁半导体材料中磁性弱和磁性来源机制不明确的问题，提出ZnO/IIIA多层交替结构模型，采用多层结构增强半导体/金属薄膜间的界面磁性，同时利用层间铁磁偶合的方式极化半导体夹层内的载流子自旋方向。通过分析ZnO/IIIA界面磁性随实验生长条件参数的变化，探索在非磁性元素体系中室温下获得强铁磁性的实验手段；结合实验和理论计算手段深入研究ZnO/IIIA多层交替结构中的界面电荷传递行为以及磁性来源机制。本项目最终将研制出载流子极化的低电阻率、高迁移率半导体导电薄膜，为实现磁性半导体材料在新型自旋电子器件上的应用奠定基础。

稀磁半导体，将半导体的信息处理与磁性材料的信息存储功能融合在一起, 是实现自旋电子器件的理想材料。本研究项目针对目前非磁性元素掺杂稀磁半导体材料中磁性弱和磁性来源机制不明确的问题，提出ZnO/IIIA 多层交替结构模型，利用层间铁磁偶合的方式极化半导体夹层内的载流子自旋方向。通过系列研究，实验上采用PLD 技术成功制备出ZnO/Al/ZnO多层复合薄膜，并通过调控制备工艺和参数，调节金属夹层的厚度，制备出高饱和磁矩的ZnO/IIIA多层周期结构；采用多层结构大大增强了半导体/金属薄膜间的界面磁性；通过理论计算研究探索了体系磁性来源机制，得出吸附Al原子与体系间产生的电荷转移是该非磁性体系具有磁性的本质来源的结论。本项目为制备出低电阻率、高迁移率半导体导电薄膜，为实现磁性半导体材料在新型自旋电子器件上的应用奠定基础。