埋藏双面金属波导高性能太赫兹量子级联激光器的研究

The lack of compact and efficient terahertz emission sources is one of the major problems which exist in the terahertz research field. Semiconductor terahertz quantum cascade laser (THz QCL), a new type of THz light source, provides one of the solutions to this problem. However, a lower operating temperature of this type of device severely limits its application. To resolve this problem, we propose to improve the device performances by enhancing device heat dissipation and lateral waveguide confinement, which can be realized by fabricating buried-double-metal-waveguide THz QCL. The fabrication relies on silicon substrate-THz QCL bonding and high-energy proton implantation. As compared to conventional double-metal-waveguide THz QCLs, buried-double-metal-waveguide THz QCLs is expected to have remarkably improved performances including at least 20-50 K increase on operating temperature, 5-10 times increase on output power. The research under the frame of this project will enable significant improvement of THz QCL performances especially its working temperature, therefore favor the applications of THz QCLs, and consequently promote the progress of terahertz research field.

太赫兹领域研究面临的主要问题之一是缺少高效实用的发射源。半导体太赫兹量子级联激光器(THz QCL)有望成为解决这一问题的新型太赫兹光源。然而，这种器件目前工作温度较低的缺点却严重限制了它的应用。针对这一问题，申请者提出通过改进当前器件有源区散热能力和增强横向波导限制来提高其器件工作性能，并以此为基础，拟制作实现高温、高效工作的THz QCL。为实现这一目标，申请者创新性提出将THz QCL与导热性能和机械强度良好的硅衬底键合，并利用高能质子轰击改性材料的绝缘特性制备硅基埋层双面金属波导THz QCL。与现有工艺制备的THz QCL器件相比，预期这一新颖器件工作温度可以提升20-50 K，输出功率提高5-10倍。本项目的研究将加速THz QCL研究的实用化进程，并推进太赫兹领域的研究和应用进展。

太赫兹领域研究面临的主要问题之一是缺少高效实用的发射源。半导体太赫兹量子级联激光器(THz QCL)有望成为解决这一问题的新型太赫兹光源。然而，这种器件目前工作温度较低的缺点却严重限制了它的应用。针对这一问题，申请者提出通过改进当前器件有源区散热能力和增强横向波导限制来提高其器件工作性能，并以此为基础，拟制作实现高温、高效工作的THz QCL。为实现这一目标，申请者创新性提出将THz QCL 与导热性能和机械强度良好的硅衬底键合，并利用高能质子轰击改性材料的绝缘特性制备硅基埋层双面金属波导THz QCL。与现有工艺制备的THz QCL 器件相比，这一新颖器件工作温度可以提升30K，输出功率提高6倍。本项目的研究将加速THz QCL 研究的实用化进程，并推进太赫兹领域的研究和应用进展。