铜锌锡硫硒薄膜的离子束溅射制备及太阳电池关键科学问题研究

CZTSSe thin film solar cell, known as the third generation of thin film solar battery backup technology, since it’s absorption layer CZTSSe film for preparation of required materials source is rich, low price and non-toxic, is gradually attention and expected to become a substitute for CIGS thin film cells. In the project, an innovative and in-situ preparation of CZTSSe thin film in the same vacuum by ion-beam sputtering deposition without post-sulfidization or post-selenization is proposed. It can optimize the film quality and simplify the fabricated process with the preparation of CZTS in the same vacuum environment for the protected from contamination. This project focuses on the physical mechanism of the growth of CZTSSe films by ion-beam sputtering deposition.It is necessary to build the physical correlation model between the ion beam sputtering parameter and the microstructural, composition and key properties. It is crusial to study the surface state electronic structure and chemical identity and summarize mechanism of surface state passivation. Base on the optimized properties of heterojunction, it aims to the core technology with independent intellectual property rights and provide the scientific evidence and technical assistance.

作为第三代薄膜太阳电池的候补技术铜锌锡硫硒（CZTSSe）薄膜太阳电池，其吸收层CZTSSe薄膜因为制备所需材料矿源丰富，价格低并无毒，可望成为替代CIGS薄膜太阳电池吸收层的最佳材料之一而逐渐受到关注。本项目提出采用离子束溅射沉积法，在同一真空室内，省略传统后硒（硫）化工艺且原位制备CZTSSe薄膜，减少外界对其生长过程中的影响，优化成膜环境，从而提高薄膜质量，简化电池制备工艺。围绕CZTSSe薄膜离子束溅射生长的物理机理，建立离子束溅射参量与CZTSSe薄膜结构、化学成分比和关键性能的相关性物理模型；同时深入研究CZTSSe薄膜表面态电子结构及化学特性并设计离子后处理薄膜表面获取其表面态钝化机制，分析薄膜太阳电池各膜层界面生长状态，优化异质结性能，完成基于离子束溅射沉积法CZTSSe薄膜太阳电池制备，为真正实现其高效率和低成本生产提供科学依据和技术基础。

目前，CZTS(Se)薄膜太阳电池开发尚处于实验室开发研究阶段，要进一步提高电池转化效率和降低成本，必须深入研究关键吸收层薄膜制备工艺与光电性能的优化。本研究提出并实现采用离子束溅射直接制备CZTS(Se)薄膜，该法省略传统后硒（硫）化工艺、优化成膜环境和薄膜性能且能够提高原材料利用率，制备出微结构和光电性能较优的器件质量级别的吸收层材料CZTS(Se)薄膜；掌握基于离子束溅射制备CZTS(Se)薄膜的生长机理和关键技术，并首次获得基于离子束溅射法制备CZTS(Se)薄膜太阳电池转化效率接近5%；同时开发新型钙钛矿和Sb2Se3薄膜太阳电池材料和器件新的制备技术，相关结果已经发表在国内外著名学术期刊上并申请国家发明专利，为薄膜太阳电池产业创新性技术研发提供科学依据和理论支持。