InGaAs-InAs/GaSb双色红外探测材料与器件研究

Two-colour infrared detectors of short/middle wavelength will be used in guiding weapon systems abroadly. The terrace two-colour materials and detectors with InGaAs homostructure short-wavelength and InAs/GaSb II type superlattice middle-wavelength will be researched in this project. The device is made of p-n-p structure. The response wavelengths are 1μm-2.7μm and 3μm-5μm respectively. Some scientific problems will be resolved.The mathematic model of short-wavelength and middle-wavelength materials and the academic model of two-colour device will be established, including the design and optimization of these models.The high-uniform epitaxy material used for device making will be growed by study of material growth mechanism and material growth technology. The relationship between material and device will be analyzed by measurement of material's optics and electrics properties. The key device making technologies, such as ICP etching, surface passivation, will be researched. Properties of device changing with temperature will be investigated by measurment of I-V, response spectrum, detectivity, crosstalk, and so on. We will explore the two-colour infrared materials and detectors of short/middle wavelength based on InGaAs-InAs/GaSb first time. The achievement of this project will provide a new technology approach to appliance of two-colour infrared detectors in national defence.

短/中波红外双色探测器在制导武器系统有重要的应用前景，本项目开展InGaAs同质结短波和InAs/GaSb II类超晶格中波双色叠层材料与探测器探索研究，器件采用p-n-p结构，理论响应波段分别为1μm-2.7μm和3μm-5μm。着重研究以下关键科学问题：建立短/中波材料数学模型和双色探测器理论模型，包括材料和器件的设计与优化；开展材料生长机理和生长技术研究，生长出能用于器件制备均匀性高的外延材料；对材料光学和电学性质进行表征，分析材料特性与器件性能的对应关系；研究器件关键制备技术，包括反应离子刻蚀、表面钝化等；研究器件性能随温度的变化,如I-V特性、响应光谱、探测率、串音等。首次对InGaAs-InAs/GaSb短/中波红外双色叠层材料及探测器进行探索研究，该项目的顺利完成，将为红外双色探测器在国防领域应用提供新的技术途径。

短/中波红外双色探测器在制导武器系统有重要的应用前景，本项目开展InGaAs短波和InAs/GaSb II类超晶格中波双色叠层材料与探测器探索研究，双色器件理论响应波段分别为1-2.7µm和3-5µm。建立短/中波材料数学模型和双色探测器理论模型,开展材料生长机理和生长技术研究，揭示了生长参数对材料性能和光电性能的影响趋势，优化了其生长参数。阐明了生长参数对不同界面的超晶格晶体结构和表面形貌的影响机理。使用了生长中断法和MEE法可以对界面结构和界面厚度进行精确控制，获得了表面10μm×10μm面积内粗糙度为3 Å的高质量超晶格材料。.研究了器件关键制备技术，包括刻蚀、表面钝化等。器件台面结构制备采用湿法腐蚀和电感耦合等离子体（ICP）干法刻蚀技术.经过对比研究发现，湿法腐蚀中磷酸系腐蚀后台面平整、表面无残留，但存在侧向钻蚀，湿法腐蚀只适用于单元红外器件制作工艺。干法刻蚀后的台面平整、侧壁光滑、陡直，适合深台阶焦平面探测器制备。采用了几种不同的表面钝化方法对刻蚀台面进行钝化。钝化后漏电流密度减小三到五个数量级，性能大大提高。.研制出双色器件光伏阵列芯片，获得了性能良好的芯片样机，在测试杜瓦中短波峰值探测率达到D*p=2.7×1011cmHz1/2/W-1，短波达到D*p=6×1010cmHz1/2/W-1的水平。首次对InGaAs(Sb)-InAs/GaSb短/中波红外双色叠层材料及探测器进行探索研究，该项目的顺利完成，为红外双色探测器在国防领域应用提供新的技术途径。