II-VI族低维半导体微纳器件的构筑及其光电性能的原位研究

Low-dimensional II-VI semiconductor materials are ideal candidates for the opto-electronic converting device due to their specific structures and distinct optoelectronic properties. It's difficult to get the direct relationship between materials structures and devices performances through traditional non-in-situ characterization techniques. It usually affects the further improvement of the optoelectronic devices. In this project, the applicants will build opto-electronic devices based on low-dimensional II-VI semiconductor structures inside SEM. The microstructures and behaviors of I-VI semiconductor structures during the opto-electronic converting process will be investigated. Through combining the SEM、CL and nano tip techniques, the microstructures of II-VI materials, optical properties and electronic properties are characterized together. We will investigate the factors that influence the optoelectronic performances including size, heterostructrues, and interface between electrodes and materials, and search after the related mechanism between microstructures, optoelectronic converting process and device performance. We will establish a novel in-situ technique to characterize the opto-electronic converting devices, and know directviewingly and veritably the dynamic opto-electronic converting process. This projects aims to explore the intrinsic optoelectronic mechanism so as to provide new concepts for the development of novel optoelectronic functional materials and constructions of high-performance optoelectronic devices.

低维II-VI族半导体材料由于其独特的结构和优异的光电性质在光电器件方面有着重要的应用前景。传统的非原位表征技术难以得到材料结构与器件性能的直接关联性，从而限制了光电器件性能的进一步提高。本项目以低维II-VI族半导体材料的设计和制备为基础，在扫描电镜内部原位搭建光电器件原型或观测已构筑的光电器件(光探测器件)，通过对单根低维纳米材料的微观结构、光学性能和电学性能的"一体化"表征测量，研究低维材料尺寸、异质结构、电极与材料界面等对光电器件(光探测器)性能的影响规律，探索低维结构、光电转换过程和器件性能之间的关联机制。建立原位、实时表征光电转换器件的新方法，直观和真实地认识光电转化过程，揭示光电转换的内在机制，为开发新型光电功能材料和构建高性能光电器件提供新思路。

低维II-VI 族半导体材料由于其独特的结构和优异的光电性质在光电器件方面有着重要的应用前景。本项目首先通过改进的化学气相沉积技术实现了一系列低维II-VI族半导体（例如ZnS, CdS, ZnO）及其他半导体材料的可控合成，并结合微纳加工与原位测试平台，实现了对低维材料结构、形貌与器件光电性能的同步研究，初步揭示了低维结构、光电转换过程和器件性能之间的关联机制。项目执行期间，累计在Adv. Mater., Adv. Funct. Mater.等期刊上发表论文44篇，申请专利5项，指导出站博士后6名，毕业博士生4名，毕业硕士研究生10名。项目负责人荣获国家杰出青年基金、英国皇家化学会会士、高被引科学家、科技部中青年科技创新领军人才等。通过本项目的实施，为开发新型光电功能材料和构建高性能光电器件提供了新的思路。