N掺杂ZnO中补偿施主抑制与受主形成机制的研究

As a preferential material for the ultra-violet (UV) / blue band light emission and detection, zinc oxide (ZnO) has a huge potential in the application of energy-saving solid-state illumination, solar-cell, and UV band photo-detection. Although encouraging achievements of the p-type doping in ZnO have been shown, there is no ultimate solution for the p-type difficulty, and thus the ZnO-based optoelectronic devices are not commercially available. This proposal will systematically investigate the suppresssion of the compensating donors and the formation mechanism of the acceptors, trying to provide some characterization methods for donors and acceptors and accurately assign the origin of the shallow acceptors. The study includes the following aspects: (1) the control of zinc interstitials and related compensating donors in nitrogen-doped ZnO; (2) the formation mechanism of zinc-vacancies and related shallow acceptors; (3) the mechanism of controlling compensating donors and desired acceptors in tellurium-nitrogen and sulfur-nitrogen co-doped ZnO. As a result of the above studies, the comprehensive characterization methods for zinc interstitial related shallow donors and zinc vacancy related shallow acceptors will be established. The control of the shallow donors and acceptors will be obtained with in-depth understanding of their formation and properties. The target of the study is to realize p-type ZnO with full suppression of shallow donors and introduction of desirable shallow acceptors. The quality of the p-type material will be checked by the performance of the ZnO-based opto-electronic proto-type devices. We hope that this study will move forward the knowledge about p-type doping in ZnO.

ZnO作为紫外蓝光波段发光探测的优选材料，在节能照明、太阳能电池、紫外探测领域具有广阔的应用潜力。虽然目前对ZnO的p型掺杂研究已取得令人鼓舞的成果，但p型掺杂始终未能突破，致使ZnO基光电器件迄今未能商用。本项目针对N掺杂ZnO中补偿施主抑制和浅受主形成机制两个问题，围绕施主受主的表征方法和受主形态指认这两个关键点，采用理论结合实验的方法研究：(1) N掺杂ZnO中间隙锌相关浅施主的补偿调控；(2) N掺杂ZnO中锌空位相关浅受主的形成机制；(3)Te/N和S/N共掺对ZnO中浅施主和浅受主的形成与调控机理。通过以上研究，建立起浅施主间隙锌和浅受主锌空位的综合表征方法，掌握其调控机制，实现p型ZnO材料中浅施主的抑制和浅受主的形成，并设计和制备ZnO基光电子原型器件以验证p型性能，以期推进ZnO中p型掺杂的解决和商用。

ZnO作为一种宽禁带直接带隙半导体材料，在紫外光电子器件中具有潜在应用。然而氧化锌的p型掺杂难题始终困扰着全球科研人员，阻碍氧化锌相关器件的实际应用。针对ZnO难以实现高效p型掺杂这一重大科学问题，项目主要从施主抑制和受主诱导两方面对N掺杂氧化锌材料进行了深入的研究。在施主方面，项目主要研究了间隙锌及其团簇的表征、性质和调控，获得了一些间隙锌相关施主的抑制手段；在受主方面，项目侧重于N掺ZnO中浅受主形态的指认以及实验调控，对近期理论预言的几种全新受主类型进行了故意诱导。项目同时还研究了等价元素-受主共掺技术在抑制补偿施主，浅化N相关受主，提升晶格质量等方面的机理。最终在器件层面，基于ZnO纳米柱，项目研究了发光器件、忆阻器和探测器的制备与性能，完成了从材料到实际应用的初步探索。