基于石墨烯和Ⅲ族氮化物的双色探测器研究

Due to the rapid development of infrared jamming technology, the complexity of the practical application environment and the increasing requirements for integration, the monochromatic detector is increasingly unable to meet the needs of application. The unceasing development of the detector technology is in the direction of large array, focal plane, integration, small volume, and multi-color direction, where ultraviolet-infrared integrated detectors and other large band integrated multicolor detectors become important needs of each country in the detection field. For the needs and application requirements of the mid-infrared and ultraviolet solar blind integrated detectors, based on our previous research on group III nitride detectors and the great application potential of the graphene in photodetectors, this project focuses on the effect of defect midgap states band, charged impurity scattering, surface-optical phonon scattering and interdigital electrode metal plasmon on the performance of the detectors, and further improving of response characteristics of the two kinds of detectors and the integrated detectors. Through the implementation of this project, the mid-infrared and ultraviolet solar blind two-color integrated detectors with high performance will be realized and the photoelectric detection mechanism of the graphene will be further investigated.

由于红外干扰技术的快速发展、实际应用环境的复杂性及对集成度要求的不断提高，单色探测器越来越不能满足应用的需要。探测器技术不断向大列阵、焦平面、集成化、小体积、多色化方向发展，尤其紫外与红外集成探测等大波段范围多色集成探测成为各个国家在探测领域的重要需求。本项目面向对中红外-日盲紫外双色集成探测器的需要与应用，基于前期的Ⅲ族氮化物探测器的研究工作和石墨烯在光电探测器方面的巨大应用潜力，研究缺陷中间态能带、电荷杂质散射、表面光学声子散射以及集成后叉指电极金属等离子基元对探测器性能的影响，进一步提高两种探测器与集成探测器的响应特性。通过本项目的实施，实现高性能的中红外-日盲紫外双色集成探测器并进一步研究石墨烯的光电探测机理。

由于红外干扰技术的快速发展、实际应用环境的复杂性及对集成度要求的不断提高，单色探测器越来越不能满足应用的需要。探测器技术不断向大列阵、焦平面、集成化、小体积、多色化方向发展，尤其紫外与红外集成探测等大波段范围多色集成探测成为各个国家在探测领域的重要需求。本项目面向对中红外-日盲紫外双色集成探测器的需要与应用，基于前期的Ⅲ族氮化物探测器的研究工作和石墨烯在光电探测器方面的巨大应用潜力，研究缺陷中间态能带、电荷杂质散射、表面光学声子散射以及集成后叉指电极金属等离子基元对探测器性能的影响，进一步提高两种探测器与集成探测器的响应特性。.通过本项目的实施，实现了高质量的石墨烯转移技术和缺陷调控方法，成功实现了基于石墨烯和AlGaN的红外-日盲紫外双色集成探测器，红外响应度达到0.67mA/W@1150nm，紫外响应达到5.9mA/W@263nm，并研究了偏置电压对探测器响应度的影响。此外，为了进一步提高石墨烯的红外响应度，引入了对红外吸收更高的其他二维材料（MoTe2、Cu3-xP）与石墨烯形成异质结，具有高吸收特性的二维材料在红外激发下产生更多的电子-空穴对，然后转移到具有高迁移率的石墨烯上，从而成功地大幅度提高了石墨烯红外探测器的响应度，响应度达到970.82A/W@1064nm。